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  1. No Access

    Article

    Localized Silicon Nanocrystals Fabricated by Stencil Masked Low Energy Ion Implantation: Effect of the Stencil Aperture Size on the Implanted Dose

    In this paper, we develop a new method based on ultra-low-energy ion implantation through a stencil mask to locally fabricate Si nanocrystals in an ultrathin silica layer. We perform a 1 keV Si implantation wi...

    R. Diaz, C. Dumas, J. Grisolia, T. Ondarçuhu, S. Schamm… in MRS Online Proceedings Library (2009)

  2. No Access

    Article

    Ultra-Low energy Ion Implantation of Si into HfO2-based layers for Non Volatile Memory Applications

    The fabrication of NCs is carried out using an innovative method, ultra-low energy (≤5 keV) ion implantation (ULE-II) into thin (6-9 nm) HfO2–based layers in order to form after subsequent annealing a controlled ...

    P. E. Coulon, K. Chan Shin Yu, S. Schamm, G. Ben Assayag… in MRS Online Proceedings Library (2009)

  3. No Access

    Chapter and Conference Paper

    HRTEM-EELS study of atomic layer deposited thin rare earth oxide films for advanced microelectronic devices

    Replacing the SiO2 gate dielectric in advanced microelectronic devices to reduce leakage and improve gate capacitance is the subject of intensive research since nearly a decade. Several materials with a high diel...

    S. Schamm, P. E. Coulon, L. Calmels in EMC 2008 14th European Microscopy Congress… (2008)

  4. No Access

    Chapter and Conference Paper

    Low-Energy Ion-Beam-Synthesis of Semiconductor Nanocrystals in Very Thin High-k Layers for Memory Applications

    The fabrication of nanocrystals (NCs) into high-k dielectric matrices instead of SiO2 has retained particular attention for achieving NC memories with low programming voltages and improved charge retention. We pr...

    C Bonafos, S Schamm, A Mouti, P Dimitrakis… in Microscopy of Semiconducting Materials 2007 (2008)

  5. No Access

    Article

    Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO2 layers

    The effect of annealing in diluted oxygen on the structural characteristics of thin silicon dioxide layers with embedded Si nanocrystals fabricated by ultra-low energy ion implantation (1 keV) is reported. The...

    H. Coffin, C. Bonafos, S. Schamm, N. Cherkashin… in MRS Online Proceedings Library (2004)

  6. No Access

    Article

    Manipulation of 2D arrays of Si nanocrystals by ultra-low-energy ion beam-synthesis for nonvolatile memories applications

    In silicon nanocrystal (nc) based metal-oxide-semiconductor (MOS) memory structures a fine control of the Si nc location in the gate oxide is required for the pinpointing of optimal device architectures. In th...

    C. Bonafos, N. Cherkashin, M. Carrada, H. Coffin… in MRS Online Proceedings Library (2004)

  7. No Access

    Article

    Multi-Dot Floating-Gates in MOSFETs for Nonvolatile Memories–Their Ion Beam Synthesis and Morphology

    Scalability and performance of current flash memories can be improved substantially by novel devices based on Multi-Dot Floating Gate MOSFETs. The multi-dot layer in the very thin gate oxide can be fabricated ...

    T. Müller, K.-H. Heinig, C. Bonafos, H. Coffin… in MRS Online Proceedings Library (2003)

  8. No Access

    Article

    High-resolution electron microscopy investigations of stacking faults in Y1Ba2Cu3O7−δ metalorganic chemical vapor deposited thin films

    New structural planar defects in Ba-deficient Y1Ba2Cu3O7−δ (YBCO) (1:1.6:3) thin films grown on NdGaO3 and SrTiO3 substrates by metalorganic chemical vapor deposition have been observed by means of high-resolutio...

    Ch. Grigis, S. Schamm, D. Dorignac in Journal of Materials Research (1999)

  9. No Access

    Article

    Correlations between gas phase supersaturation, nucleation process and physico-chemical characteristics of silicon carbide deposited from Si-C-H-Cl system on silica substrates

    In the CH3SiCl3-H2 CVD system, from which SiC-based films are prepared, the supersaturation of the gas phase increases when temperature and total pressure decreases and when a diffusion-controlled kinetic process...

    D. Lespiaux, F. Langlais, R. Naslain, S. Schamm, J. Sevely in Journal of Materials Science (1995)

  10. No Access

    Article

    The K2ZrF6 wetting process: Effect of surface chemistry on the ability of a SiC-Fiber preform to be impregnated by aluminum

    SiC-ceramic materials, either as flat substrates or porous fiber preforms, are spontaneously wetted by aluminum at 700 °C to 800 °C when they have been pretreated with an aqueous solution of K2ZrF6. The wetting e...

    S. Schamm, R. Fedou, J. P. Rocher, J. M. Quenisset… in Metallurgical Transactions A (1991)

  11. No Access

    Chapter

    Physicochemical Aspects of the K2ZrF6 Process Allowing the Spontaneous Infiltration of SiC (or C) Preforms by Liquid Aluminium

    K2ZrF6 enhances the wetting ability of SiC (or C) fibers by liquid aluminum alloys at low temperatures due to (i) a dissolution of the alumina film by fluoride species, (ii) a local evolution of heat related to e...

    S. Schamm, J. P. Rocher, R. Naslain in Developments in the Science and Technology… (1989)