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  1. No Access

    Article

    Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO2 layers

    The effect of annealing in diluted oxygen on the structural characteristics of thin silicon dioxide layers with embedded Si nanocrystals fabricated by ultra-low energy ion implantation (1 keV) is reported. The...

    H. Coffin, C. Bonafos, S. Schamm, N. Cherkashin… in MRS Online Proceedings Library (2004)

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    Article

    Manipulation of 2D arrays of Si nanocrystals by ultra-low-energy ion beam-synthesis for nonvolatile memories applications

    In silicon nanocrystal (nc) based metal-oxide-semiconductor (MOS) memory structures a fine control of the Si nc location in the gate oxide is required for the pinpointing of optimal device architectures. In th...

    C. Bonafos, N. Cherkashin, M. Carrada, H. Coffin… in MRS Online Proceedings Library (2004)

  3. No Access

    Article

    Multi-Dot Floating-Gates in MOSFETs for Nonvolatile Memories–Their Ion Beam Synthesis and Morphology

    Scalability and performance of current flash memories can be improved substantially by novel devices based on Multi-Dot Floating Gate MOSFETs. The multi-dot layer in the very thin gate oxide can be fabricated ...

    T. Müller, K.-H. Heinig, C. Bonafos, H. Coffin… in MRS Online Proceedings Library (2003)