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Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO2 layers

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Abstract

The effect of annealing in diluted oxygen on the structural characteristics of thin silicon dioxide layers with embedded Si nanocrystals fabricated by ultra-low energy ion implantation (1 keV) is reported. The nanocrystal characteristics (size, density, coverage) have been measured by spatially resolved Electron Energy Loss Spectroscopy using the spectrum-imaging mode of a Scanning Transmission Electron Microscope. Their evolution has been studied as a function of the annealing duration under N2+O2 at 900°C. An extended spherical Deal-Grove model for the self-limiting oxidation of embedded silicon nanocrystals has been carried out. It shows that stress effects, due to the deformation of the oxide, slows down the chemical oxidation rate and leads to a self-limiting oxide growth. The model predictions show a good agreement with the experimental results.

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Acknowledgments

This work was supported by the European Commission through the Growth project G5RD/2000/00320–NEON (Nanoparticles for Electronics). The authors want to thank V. Soncini from ST Microelectronics Agrate for the oxidised wafers and A. Agarwal from Axcelis Technologies Inc. for the implantation.

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Authors and Affiliations

  1. CEMES-CNRS, 29 rue J. Marvig, 31055, Toulouse, France

    H. Coffin, C. Bonafos, S. Schamm, N. Cherkashin, G. Ben Assayag & A. Claverie

  2. Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St Petersburg, 194021, Russia

    N. Cherkashin

  3. Département de Physique, LNMO, INSA, 135 avenue de Rangueil, 31077, Toulouse, France

    M. Respaud

  4. Institute of Microelectronics, NCSR 'Demokritos', 15310, Aghia Praskevi, Greece

    P. Dimitrakis & P. Normand

  5. Laboratoire de Physique des Solides, Université Paris-Sud -UMR 8502, 91405, Orsay, France

    M. Tencé & C. Colliex

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  1. H. Coffin
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  2. C. Bonafos
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  3. S. Schamm
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  5. M. Respaud
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  6. G. Ben Assayag
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  7. P. Dimitrakis
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  8. P. Normand
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  11. A. Claverie
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Coffin, H., Bonafos, C., Schamm, S. et al. Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO2 layers. MRS Online Proceedings Library 830, 311–316 (2004). https://doi.org/10.1557/PROC-830-D6.6

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  • DOI: https://doi.org/10.1557/PROC-830-D6.6

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