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  1. No Access

    Article

    Modelling of the oxidation of Suspended Silicon Nanowires

    The oxidation of suspended Si nanowires is studied under wet and dry conditions. The nanowire characteristics are extracted from Electron Microscopy images. In parallel, the Deal and Grove model is extended to...

    P. F. Fazzini, C. Bonafos, A. Hubert, J.-P. Colonna… in MRS Online Proceedings Library (2009)

  2. No Access

    Chapter and Conference Paper

    Three-Dimensional Field Models for Reverse Biased P-N Junctions

    In order to obtain reliable quantitative information on the electrostatic field associated with reverse-biased p-n junctions and on the distribution of dopants, the physics of the so-called “dead layer” and th...

    F Ubaldi, G Pozzi, P F Fazzini, M Beleggia in Microscopy of Semiconducting Materials 2007 (2008)

  3. No Access

    Chapter and Conference Paper

    Interference electron microscopy of reverse-biased p-n junctions

    Electron interferometry experiments on straight reverse-biased p-n junctions have been carried out in a transmission electron microscope. The trends of the interference fringes as well as the shape of the inte...

    P F Fazzini, P G Merli, G Pozzi, F Ubaldi in Microscopy of Semiconducting Materials (2005)