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Modelling of the oxidation of Suspended Silicon Nanowires

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Abstract

The oxidation of suspended Si nanowires is studied under wet and dry conditions. The nanowire characteristics are extracted from Electron Microscopy images. In parallel, the Deal and Grove model is extended to cylindrical geometry. The used model also assumes that stress effects reduce the oxidation rate and predicts the retardation of oxide growth on curved surface, leading to a self-limited process. The model predictions show a good agreement with experiments.

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Authors and Affiliations

  1. CEMES-CNRS - Université de Toulouse, 29 rue J. Marvig, 31055, Toulouse, France

    P. F. Fazzini, C. Bonafos & F. Gloux

  2. LAAS-CNRS - Université de Toulouse, 7 avenue du Colonel Roche, 31077, Toulouse, France

    P. F. Fazzini

  3. CEA-LETI, Minatec, 17 rue des martyrs, 38054, Grenoble, Cedex, France

    A. Hubert, J.-P. Colonna & T. Ernst

  4. LPCNO, INSA, Département de Physique, 135 avenue de Rangueil, 31077, Toulouse, France

    M. Respaud

Authors
  1. P. F. Fazzini
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  2. C. Bonafos
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  3. A. Hubert
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  4. J.-P. Colonna
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  5. T. Ernst
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  6. M. Respaud
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  7. F. Gloux
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Fazzini, P.F., Bonafos, C., Hubert, A. et al. Modelling of the oxidation of Suspended Silicon Nanowires. MRS Online Proceedings Library 1144, 1806 (2008). https://doi.org/10.1557/PROC-1144-LL18-06

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  • DOI: https://doi.org/10.1557/PROC-1144-LL18-06

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