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Article
Compositional Fluctuations in AlxGa1-xN Layers grown on 6H-SiC (0001) by Metal Organic Vapor Phase Epitaxy
The microstructural evolution of AlxGa1-xN films grown by metalorganic vapor phase epitaxy on 6H-SiC (0001) was studied by means of X-ray diffraction, atomic force microscopy and transmission electron microscopy ...
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Article
Investigation of Green Emitting Monolithic II-VI Vertical Cavity Surface Emitting Laser
In this paper, we are investigating the growth of a ZnSe based vertical cavity surface emitting laser (VCSEL). Undoped and p-type doped distributed Bragg reflectors (DBRs) with reflectivities exceeding 99% hav...
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Chapter and Conference Paper
Interaction of Stacking Faults in Wurtzite a-Plane GaN on r-Plane Sapphire
The defect structure in a-plane GaN films grown on r-plane sapphire distinguishes itself significantly from the one found in c-plane GaN. Transmission electron microscopy studies on a-plane GaN films grown by hyd...
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Chapter and Conference Paper
Concentration Evaluation in Nanometre-Sized In x Ga1-x N Islands Using Transmission Electron Microscopy
In this work the indium concentration of uncapped InGaN samples is measured by three different transmission electron microscopy approaches which are based on measurement of local lattice plane distances. In th...
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Article
Anti-diffusion barriers for gold-based metallization to GaN
We propose a new metallization scheme to p-GaN, where thin-film transition metal nitrides have been applied to improve thermal stability of gold-based metallization. In this metallization scheme the Pd/Au bila...
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Chapter and Conference Paper
Characterization and structuring of nitride-based heterostructures for vertical-cavity surface-emitting lasers
A new approach for nitride-based distributed Bragg reflectors as mirrors for vertical-cavity surface-emitting lasers was investigated by means of transmission electron microscopy. These layers consisted of mul...
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Chapter and Conference Paper
Investigation of InxGa1−x N islands with electron microscopy
InxGa1−x N islands grown by molecular beam epitaxy are analysed by transmission electron microscopy. Samples are compared which were of different nominal In concentrations and with or without GaN ...
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Article
Microstructure of highly p-type doped GaN sub-contact layers for low-resistivity contacts
The effect of a highly Mg doped subcontact layer on top of GaN grown by metal organic vapor phase epitaxy and its interface to a Pd/Au contact layer was investigated by means of transmission electron microscop...
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Article
Determination of the anisotropic optical properties for perfluorinated vanadyl phthalocyanine thin films
Thin films of perfluorinated vanadyl phthalocyanine F16PcVO were prepared by physical vapor deposition in high vacuum on KBr and fused silica substrates. The absorption spectra in the visible region show that the...
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Article
Nucleation and Growth of CVD Cu Films
In this work the nucleation and growth of CVD Cu on MOCVD TiN barrier layer as well as on PVD Ta with and without a PVD Cu seed layer on top were studied. Scanning and transmission electron microscopy was used...