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  1. Article

    Open Access

    Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence

    Non-intentionally doped c-plane GaN layers are generally employed as p-side waveguide layers in violet/blue-emitting laser diodes. The recombination and diffusion of charge carriers in the p-side GaN waveguide...

    C. Netzel, V. Hoffmann, S. Einfeldt, M. Weyers in Journal of Electronic Materials (2020)

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  2. No Access

    Article

    Precision UV laser scribing for cleaving mirror facets of GaN-based laser diodes

    Laser scribing with a nanosecond-pulsed UV laser operating at 355 nm was used to create precise perforation for die separation of GaN-based laser diodes. Machining depth of single- and multiple-pass scribing w...

    O. Krüger, J.-H. Kang, M. Spevak, U. Zeimer, S. Einfeldt in Applied Physics A (2016)

  3. No Access

    Article

    Anisotropic Responsivity of AlGaN Metal–Semiconductor–Metal Photodetectors on Epitaxial Laterally Overgrown AlN/Sapphire Templates

    Al0.4Ga0.6N metal–semiconductor–metal photodetectors on epitaxial laterally overgrown (ELO) AlN/sapphire templates show anisotropic device characteristics depending on the orientation of the electrode stripes wit...

    M. Brendel, A. Knigge, F. Brunner, S. Einfeldt… in Journal of Electronic Materials (2014)

  4. No Access

    Article

    Studies on Carbon as Alternative P-Type Dopant for Gallium Nitride

    GaN layers were grown by molecular beam epitaxy and doped with carbon of nominal concentrations ranging from 1016 cm-1 to 10 20 cm-1. The incorporation of carbon leads to a reduction of the background electron co...

    U. Birkle, M. Fehrer, V. Kirchner, S. Einfeldt, D. Hommel… in MRS Online Proceedings Library (2011)

  5. No Access

    Article

    Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy

    InGaN layers grown by molecular beam epitaxy are investigated in terms of their compositional homogeneity using transmission electron microscopy and cathodoluminescence spectroscopy performed with high spatial...

    S. Einfeldt, T. Böttcher, D. Hommel, H. Selke… in MRS Online Proceedings Library (2011)

  6. No Access

    Article

    Influence of Do** on the Lattice Dynamics of Gallium Nitride

    We present results of Raman-scattering experiments on GaN doped with Si, C, and Mg, respectively, grown by molecular beam epitaxy (MBE). The influence of the different dopants on strain and free-carrier concen...

    A. Kaschner, H. Siegle, A. Hoffmann, C. Thomsen… in MRS Online Proceedings Library (2011)

  7. No Access

    Article

    Study of the Origin of Misorientation in GaN Grown by Pendeo-Epitaxy

    Growth of pendeo-epitaxial (PE) layers introduces misorientation between the seed layers and the overgrown wing layers. The origin of this misorientation has been studied by Transmission Electron Microscopy (T...

    D. N. Zakharov, Z. Liliental-Weber, A. M. Roskowski… in MRS Online Proceedings Library (2011)

  8. No Access

    Article

    Compositional Fluctuations in AlxGa1-xN Layers grown on 6H-SiC (0001) by Metal Organic Vapor Phase Epitaxy

    The microstructural evolution of AlxGa1-xN films grown by metalorganic vapor phase epitaxy on 6H-SiC (0001) was studied by means of X-ray diffraction, atomic force microscopy and transmission electron microscopy ...

    R. Kröger, S. Einfeldt, Z. J. Reitmeier, R. Chierchia… in MRS Online Proceedings Library (2011)

  9. No Access

    Article

    Spatially Resolved Characterization of Microstructure, Defects and Tilts in GaN Layers Grown on Si(111) Substrates by Maskless Cantilever Epitaxy

    The spatially resolved distribution of strain, misfit and threading dislocations, and crystallographic orientation in uncoalesced GaN layers grown on Si(111) substrates by maskless cantilever epitaxy was studi...

    R. I. Barabash, C. Roder, G. E. Ice, S. Einfeldt… in MRS Online Proceedings Library (2006)

  10. No Access

    Article

    Characterization of Stress Relaxation, Dislocations and Crystallographic Tilt Via X-ray Microdiffraction in GaN (0001) Layers Grown by Maskless Pendeo-Epitaxy

    Intrinsic stresses due to lattice mismatch and high densities of threading dislocations and extrinsic stresses resulting from the mismatch in the coefficients of thermal expansion are present in almost all III...

    R.I Barabash, G. E. Ice, W. Liu, S. Einfeldt, D. Hommel… in MRS Online Proceedings Library (2006)

  11. No Access

    Article

    Micro-photoluminescence studies of excitonic and multiexcitonic states of quantum dot-like localization centers in InGaN/GaN structures

    We present micro-photoluminescence measurements on unstructured InGaN/GaN quantum well samples. Single sharp emission lines were observed and their optical properties were studied as a function of temperature ...

    K. Sebald, H. Lohmeyer, J. Gutowski, S. Einfeldt… in MRS Online Proceedings Library (2004)

  12. No Access

    Chapter and Conference Paper

    GaN-Based Laser Diodes

    Laser diodes have been fabricated from group-III nitride layer structures grown by metalorganic vapor phase epitaxy on c-plane sapphire substrates. The gain-guided devices emitted at a wavelength of around 400...

    S. Einfeldt, S. Figge, T. BÖttcher… in UV Solid-State Light Emitters and Detectors (2004)

  13. No Access

    Article

    Maskless pendeo-epitaxial growth of GaN films

    High-resolution x-ray diffraction (XRD) and atomic force microscopy (AFM) of pendeo-epitaxial (PE) GaN films confirmed transmission electron microscopy (TEM) results regarding the reduction in dislocations in ...

    A. M. Roskowski, E. A. Preble, S. Einfeldt… in Journal of Electronic Materials (2002)

  14. Article

    Influence of Do** on the Lattice Dynamics of Gallium Nitride

    We present results of Raman-scattering experiments on GaN doped with Si, C, and Mg, respectively, grown by molecular beam epitaxy (MBE). The influence of the different dopants on strain and free-carrier concen...

    A. Kaschner, H. Siegle, A. Hoffmann… in MRS Internet Journal of Nitride Semiconduc… (1999)

    Download PDF (223 KB) View Article

  15. Article

    Studies on Carbon as Alternative P-Type Dopant for Gallium Nitride

    GaN layers were grown by molecular beam epitaxy and doped with carbon of nominal concentrations ranging from 1016 cm−3 to 1020 cm−3. The incorporation of carbon leads to a reduction of the background electron con...

    U. Birkle, M. Fehrer, V. Kirchner… in MRS Internet Journal of Nitride Semiconduc… (1999)

    Download PDF (127 KB) View Article

  16. Article

    Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy

    InGaN layers grown by molecular beam epitaxy are investigated in terms of their compositional homogeneity using transmission electron microscopy and cathodoluminescence spectroscopy performed with high spatial...

    S. Einfeldt, T. Böttcher, D. Hommel… in MRS Internet Journal of Nitride Semiconduc… (1999)

    Download PDF (143 KB) View Article

  17. No Access

    Article

    MBE Growth of GaN on NdGaO3 (101)

    We report on the growth of GaN on NdGaO3 (101) by plasma assisted molecular beam epitaxy (MBE). NdGaO3 (101) is an interesting alternative substrate compared to A12O3 due to its smaller lattice mismatch of +1.2 %...

    C. Fechtmann, V. Kirchner, S. Einfeldt, H. Heinke… in MRS Online Proceedings Library (1997)

  18. No Access

    Article

    Deep Trap Characterization in GaN Using Thermal and Optical Admittance Spectroscopy

    Deep defect levels and the optical as well as thermal transitions of carriers from the levels into the corresponding bands were analyzed using Thermal and Optical Admittance Spectroscopy. High resistivity GaN-...

    A. Krtschil, H. Wttte, M. Lisker, J. Christen, U. Birkle… in MRS Online Proceedings Library (1997)