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    Compositional Fluctuations in AlxGa1-xN Layers grown on 6H-SiC (0001) by Metal Organic Vapor Phase Epitaxy

    The microstructural evolution of AlxGa1-xN films grown by metalorganic vapor phase epitaxy on 6H-SiC (0001) was studied by means of X-ray diffraction, atomic force microscopy and transmission electron microscopy ...

    R. Kröger, S. Einfeldt, Z. J. Reitmeier, R. Chierchia… in MRS Online Proceedings Library (2011)