Skip to main content

5 Result(s)

within Z. J. Reitmeier Remove this filter

and

  1. No Access

    Article

    Compositional Fluctuations in AlxGa1-xN Layers grown on 6H-SiC (0001) by Metal Organic Vapor Phase Epitaxy

    The microstructural evolution of AlxGa1-xN films grown by metalorganic vapor phase epitaxy on 6H-SiC (0001) was studied by means of X-ray diffraction, atomic force microscopy and transmission electron microscopy ...

    R. Kröger, S. Einfeldt, Z. J. Reitmeier, R. Chierchia… in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    Transmission Electron Microscopy Study of Nonpolar a-Plane GaN Grown by Pendeo-Epitaxy on (1120) 4H-SiC.

    Pendeo-epitaxy has been applied to nonpolar a-plane GaN layers in order to observe if such process will lead to defect reduction in comparison with direct growth on this plane. Uncoalesced and coalesced a-plan...

    D. N. Zakharov, Z. Liliental-Weber, B. Wagner… in MRS Online Proceedings Library (2005)

  3. No Access

    Article

    Characterization and Comparison of 4H-SiC \(\left( {11\bar 20} \right)\) and 4H-SiC(0001) 8° Off-Axis Substrates and Homoepitaxial Films

    Homoepitaxial films of 4H-SiC \(\left( {11\bar 20} \right)\) and 8° off-axis 4H-SiC(0001) have been grown and characterized. The...

    S.M. Bishop, E.A. Preble, C. Hallin, A. Henry, W. Sarney… in MRS Online Proceedings Library (2004)

  4. No Access

    Article

    Growth and Characterization of Epitaxial GaN Thin Films on 4H-SiC (11.0) Substrates

    GaN thin films were grown via metalorganic vapor phase epitaxy on a-plane 4H- SiC substrates on which had been deposited an AlN buffer layer. Atomic force microscopy images revealed that the microstructure of ...

    Brian P. Wagner, E. A. Preble, Z. J. Reitmeier… in MRS Online Proceedings Library (2003)

  5. No Access

    Article

    Microstructure of Nonpolar a-Plane GaN Grown on (1120) 4H-SiC Investigated by TEM.

    Plan-view and cross-section samples of (1120) (a-plane) GaN grown on 4H-SiC substrates with AlN buffer layers were studied by transmission electron microscopy. Samples reveal the presence of a high density of sta...

    D. N. Zakharov, Z. Liliental-Weber, B. Wagner… in MRS Online Proceedings Library (2003)