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  1. No Access

    Article

    Mechanisms of carriers transport in Ni/n-SiC, Ti/n-SiC ohmic contacts

    A mechanism of carriers transport through metal-semiconductor interface created by nickel or titanium-based ohmic contacts on Si-face n-type 4H-SiC is presented herein. The mechanism was observed within the te...

    R. Kisiel, M. Guziewicz, K. Golaszewska, M. Sochacki… in Materials Science-Poland (2011)

  2. No Access

    Article

    Anti-diffusion barriers for gold-based metallization to GaN

    We propose a new metallization scheme to p-GaN, where thin-film transition metal nitrides have been applied to improve thermal stability of gold-based metallization. In this metallization scheme the Pd/Au bila...

    A. Piotrowska, E. Kaminska, M. Guziewicz, E. Dynowska… in MRS Online Proceedings Library (2005)

  3. No Access

    Article

    Thermally stable transparent Ru-Si-O Schottky contacts for n-type GaN and AlGaN

    We have developed the deposition and studied the electrical characteristics and thermal reliability of Ru-based contacts on n- type GaN as well as on AlGaN/GaN heterostructure. Amorphous, conducting and transp...

    E. Kamińska, A. Piotrowska, K. Gołaszewska… in MRS Online Proceedings Library (2004)

  4. No Access

    Article

    Electronic structure of Zn(Mn)O surface alloy - a resonant photoemission study

    Electronic structure of Mn/ZnO system has been investigated by synchrotron radiation photoemission. Manganese vacuum deposition was done at room temperature onto a ZnO(0001) single crystal for coverage ΘMn < 4...

    E. Guziewicz, K. Kopalko, J. Sadowski, M. Guziewicz… in MRS Online Proceedings Library (2004)

  5. No Access

    Article

    Transparent ZnO-Based Ohmic Contact to p-GaN

    Highly conductive ZnO films were fabricated on p-GaN in a two-step process. First, zinc was thermally evaporated on p-GaN. Next, zinc film was oxidized in oxygen flow. To increase the conductivity of ZnO, nitr...

    E. Kaminska, A. Piotrowska, K. Golaszewska, M. Guziewicz… in MRS Online Proceedings Library (2001)

  6. No Access

    Article

    Ni/Si-Based Ohmic Contacts to p- and n-Type GaN

    Ni/Si-based ohmic contact scheme for GaN, based on the solid-phase regrowth (SPR) mechanism have been developed. Using Mg and Si as dopant species, ohmic contacts with a resistivity of ∼1*10−3Ωcm2 to p-GaN (p≈3*1...

    E. Kamińska, A. Piotrowska, A. Barcz, M. Guziewicz… in MRS Online Proceedings Library (1997)

  7. No Access

    Article

    Ohmic Contact to n-GaN with TiN Diffusion Barrier

    The formation of n-GaN/Ti ohmic contacts with TiN diffusion barriers has been investigated by electrical measurements, x-ray diffraction and SIMS. It has been shown that the onset of the ohmic behaviour is ass...

    E. Kamińska, A. Piotrowska, M. Guziewicz, S. Kasjaniuk… in MRS Online Proceedings Library (1996)

  8. No Access

    Article

    Structural Processes in Gold-Based Metallization During the Formation of Ohmic Contacts to GaSb

    Annealing behavior of Au, AuZn, and AuSb metallization on GaSb have been investigated by the combined use of RBS, XRD, TEM, and I-V characterization. The results give evidence that the thermally activated cont...

    A. Piotrowska, E. Kamińska, M. Guziewicz, E. Mizera… in MRS Online Proceedings Library (1995)

  9. No Access

    Article

    Rapid Thermal Nitridation of Tungsten-Capped Shallow Ohmic Contacts to GaAs

    We report on the use of AuGeNi/W and AuZn/W metallizations and their further processing by rapid thermal nitridation. Nitrided tungsten serves as a cap suppressing the sublimation of As. To study the effect of...

    E. Kaminska, A. Piotrowska, E. Mizera, M. Guziewicz… in MRS Online Proceedings Library (1994)

  10. No Access

    Article

    Study of Arsenic Evolution During RTA of Au-Based Ohmic Contacts to GaAs

    We report on the formation of AuZn/p-GaAs ohmic contacts by short time annealing either in open or closed configuration with a dielectric or metallic cap** layer. Quantitative determination of the amount of ...

    A. Piotrowska, E. Kaminska, M. Guziewicz, T. Piotrowski… in MRS Online Proceedings Library (1994)

  11. No Access

    Article

    Dual Role of TiN Reaction Barrier in Gold-Based Metallization to GaAs

    The formation of ohmic contacts to p-GaAs based on Au-Zn system comprising a TiN diffusion barrier has been investigated using 2 MeV He+ RBS and the specific contact resistance measurements. It has been proved th...

    A. Piotrowska, E. Kamińska, M. Guziewicz, S. Kwiatkowski… in MRS Online Proceedings Library (1993)