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  1. No Access

    Chapter and Conference Paper

    TEM analyses of microstructure and composition of AlxGa1−xN/GaN distributed Bragg reflectors

    In this work we analyse the microstructure as well as layer thicknesses and Al concentration of AlxGa1−xN/GaN distributed Bragg reflectors (DBRs) by transmission electron microscopy. To gain a high reflectivity o...

    A. Pretorius, A. Rosenauer, T. Aschenbrenner… in EMC 2008 14th European Microscopy Congress… (2008)

  2. No Access

    Chapter and Conference Paper

    Concentration Evaluation in Nanometre-Sized In x Ga1-x N Islands Using Transmission Electron Microscopy

    In this work the indium concentration of uncapped InGaN samples is measured by three different transmission electron microscopy approaches which are based on measurement of local lattice plane distances. In th...

    A Pretorius, K Müller, T Yamaguchi, R Kröger… in Microscopy of Semiconducting Materials 2007 (2008)

  3. No Access

    Chapter and Conference Paper

    Investigation of InxGa1−x N islands with electron microscopy

    InxGa1−x N islands grown by molecular beam epitaxy are analysed by transmission electron microscopy. Samples are compared which were of different nominal In concentrations and with or without GaN ...

    A Pretorius, T Yamaguchi, M Schowalter, R Kröger… in Microscopy of Semiconducting Materials (2005)