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  1. No Access

    Article

    Compositional Fluctuations in AlxGa1-xN Layers grown on 6H-SiC (0001) by Metal Organic Vapor Phase Epitaxy

    The microstructural evolution of AlxGa1-xN films grown by metalorganic vapor phase epitaxy on 6H-SiC (0001) was studied by means of X-ray diffraction, atomic force microscopy and transmission electron microscopy ...

    R. Kröger, S. Einfeldt, Z. J. Reitmeier, R. Chierchia… in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    Investigation of Green Emitting Monolithic II-VI Vertical Cavity Surface Emitting Laser

    In this paper, we are investigating the growth of a ZnSe based vertical cavity surface emitting laser (VCSEL). Undoped and p-type doped distributed Bragg reflectors (DBRs) with reflectivities exceeding 99% hav...

    C. Kruse, G. Alexe, R. Kröger, M. Klude, H. Heinke… in MRS Online Proceedings Library (2011)

  3. No Access

    Chapter and Conference Paper

    Interaction of Stacking Faults in Wurtzite a-Plane GaN on r-Plane Sapphire

    The defect structure in a-plane GaN films grown on r-plane sapphire distinguishes itself significantly from the one found in c-plane GaN. Transmission electron microscopy studies on a-plane GaN films grown by hyd...

    R Kröger, T Paskova, A Rosenauer in Microscopy of Semiconducting Materials 2007 (2008)

  4. No Access

    Chapter and Conference Paper

    Concentration Evaluation in Nanometre-Sized In x Ga1-x N Islands Using Transmission Electron Microscopy

    In this work the indium concentration of uncapped InGaN samples is measured by three different transmission electron microscopy approaches which are based on measurement of local lattice plane distances. In th...

    A Pretorius, K Müller, T Yamaguchi, R Kröger… in Microscopy of Semiconducting Materials 2007 (2008)

  5. No Access

    Article

    Anti-diffusion barriers for gold-based metallization to GaN

    We propose a new metallization scheme to p-GaN, where thin-film transition metal nitrides have been applied to improve thermal stability of gold-based metallization. In this metallization scheme the Pd/Au bila...

    A. Piotrowska, E. Kaminska, M. Guziewicz, E. Dynowska… in MRS Online Proceedings Library (2005)

  6. No Access

    Chapter and Conference Paper

    Characterization and structuring of nitride-based heterostructures for vertical-cavity surface-emitting lasers

    A new approach for nitride-based distributed Bragg reflectors as mirrors for vertical-cavity surface-emitting lasers was investigated by means of transmission electron microscopy. These layers consisted of mul...

    R Kröger, C Kruse, J Dennemarck, D Hommel… in Microscopy of Semiconducting Materials (2005)

  7. No Access

    Chapter and Conference Paper

    Investigation of InxGa1−x N islands with electron microscopy

    InxGa1−x N islands grown by molecular beam epitaxy are analysed by transmission electron microscopy. Samples are compared which were of different nominal In concentrations and with or without GaN ...

    A Pretorius, T Yamaguchi, M Schowalter, R Kröger… in Microscopy of Semiconducting Materials (2005)

  8. No Access

    Article

    Microstructure of highly p-type doped GaN sub-contact layers for low-resistivity contacts

    The effect of a highly Mg doped subcontact layer on top of GaN grown by metal organic vapor phase epitaxy and its interface to a Pd/Au contact layer was investigated by means of transmission electron microscop...

    R. Kröger, J. Dennemarck, T. Böttcher, S. Figge… in MRS Online Proceedings Library (2004)

  9. No Access

    Article

    Determination of the anisotropic optical properties for perfluorinated vanadyl phthalocyanine thin films

    Thin films of perfluorinated vanadyl phthalocyanine F16PcVO were prepared by physical vapor deposition in high vacuum on KBr and fused silica substrates. The absorption spectra in the visible region show that the...

    O. D. Gordan, M. Friedrich, W. Michaelis, R. Kröger… in Journal of Materials Research (2004)

  10. No Access

    Article

    Nucleation and Growth of CVD Cu Films

    In this work the nucleation and growth of CVD Cu on MOCVD TiN barrier layer as well as on PVD Ta with and without a PVD Cu seed layer on top were studied. Scanning and transmission electron microscopy was used...

    R. Kröger, M. Eizenberg, D. Cong, N. Yoshida, L. Y. Chen… in MRS Online Proceedings Library (1999)