Skip to main content

42 Result(s)

within D. Bimberg Remove this filter Magnetism, Magnetic Materials Remove this filter

previous disabled Page of 3
and

  1. No Access

    Article

    1550 nm Range High-Speed Single-Mode Vertical-Cavity Surface-Emitting Lasers

    The results of complex studies of static and dynamic performance of 1550 nm range VCSELs, which were created by direct bonding (wafer fusion technique) InAlGaAs/InP optical cavity wafers with AlGaAs/GaAs distr...

    S. A. Blokhin, A. V. Babichev, L. Ya. Karachinsky, I. I. Novikov… in Semiconductors (2023)

  2. No Access

    Article

    Study of high-speed semiconductor VCSELs based on AlInGaAs heterostructures with large gain-cavity detuning

    The effect of the spectral detuning between the spectral gain maximum of an active region based on AlInGaAs nanoheterostructures and vertical microcavity resonance (gain-cavity detuning) on the steady-state- a...

    N. A. Maleev, S. A. Blokhin, M. A. Bobrov, A. G. Kuzmenkov, A. A. Blokhin… in Semiconductors (2015)

  3. No Access

    Article

    Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission

    Highly efficient fast vertical-cavity surface-emitting lasers (VCSELs) for the 850-nm spectral range, promising for the development of optical interconnections with a data transmission rate of 25 Gbit/s per ch...

    S. A. Blokhin, L. Ya. Karachinsky, I. I. Novikov, A. S. Payusov… in Semiconductors (2014)

  4. No Access

    Article

    High-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator

    The high-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator are studied using small-signal modulation analysis of the electro...

    A. M. Nadtochiy, W. Hofmann, T. D. Germann, S. A. Blokhin… in Semiconductors (2013)

  5. No Access

    Article

    Effect of AlGaAs-(AlGa) x O y pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots

    Effect of parameters of the AlGaAs-(AlGa) x O y layer forming the pedestal of a microdisk laser with an active region based on InAs/InGaAs quan...

    N. V. Kryzhanovskaya, S. A. Blokhin, M. V. Maximov, A. M. Nadtochy… in Semiconductors (2011)

  6. No Access

    Article

    Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K)

    Lasers that emit in the 1.3 μm wavelength range and include the active region based on InAs quantum dots were grown by the method of molecular-beam epitaxy and have been studied. The cavity includes a multilay...

    L. Ya. Karachinsky, I. I. Novikov, Yu. M. Shernyakov, N. Yu. Gordeev… in Semiconductors (2009)

  7. No Access

    Article

    Effect of excitation level on the optical properties of GaAs/AlGaO microdisks with an active region containing InAs quantum dots

    The effect of the excitation level on the intensity and width of whispering-gallery-mode (WGM) lines in microdisks with an asymmetric air/GaAs/AlGaO waveguide and an active region containing InAs quantum dots ...

    A. M. Nadtochiy, S. A. Blokhin, A. V. Sakharov, M. M. Kulagina… in Semiconductors (2008)

  8. No Access

    Article

    Room-temperature 1.3-μm lasing in a microdisk with quantum dots

    Under study are temperature dependences of laser characteristics of a GaAs/(AlGa)xOy microdisk of 6 μm in diameter, fabricated using optical lithography, ion milling with a beam of Ar+ ions, and selective oxidati...

    N. V. Kryzhanovskaya, S. A. Blokhin, A. G. Gladyshev, N. A. Maleev… in Semiconductors (2006)

  9. No Access

    Article

    Optical studies of asymmetric-waveguide submonolayer InGaAs QD microdisks formed by selective oxidation

    Lasing in microdisks with an asymmetric waveguide formed by selective oxidation was achieved under optical pum** in the temperature range 5–180 K. InGaAs quantum dots (QDs) formed by submonolayer deposition ...

    S. A. Blokhin, N. V. Kryzhanovskaya, A. G. Gladyshev, N. A. Maleev… in Semiconductors (2006)

  10. No Access

    Article

    Optical detection of asymmetric quantum-dot molecules in double-layer InAs/GaAs structures

    Self-assembled quantum dots (QDs) in double-layer InAs/GaAs structures are studied by resonant photoluminescence and photoluminescence excitation spectroscopy. A weakly correlated (50%) double-layer system wit...

    G. G. Tarasov, Z. Ya. Zhuchenko, M. P. Lisitsa, Yu. I. Mazur, Zh. M. Wang… in Semiconductors (2006)

  11. No Access

    Article

    Continuous-wave lasing of single-mode metamorphic quantum dot lasers for the 1.5-μm spectral region

    Lasers based on InAs/InGaAs quantum dots grown on metamorphic (In,Ga,Al)As layers deposited by MBE on GaAs substrates exhibited emission near 1.5 μm with a differential quantum efficiency of about 50%. The nar...

    L. Ya. Karachinsky, T. Kettler, N. Yu. Gordeev, I. I. Novikov… in Semiconductors (2005)

  12. No Access

    Article

    Nonequilibrium room-temperature carrier distribution in InAs quantum dots overgrown with thin AlAs/InAlAs layers

    The optical properties of quantum dots (QDs) formed in GaAs or Al0.3Ga0.7As matrices by overgrowth of initial InAs islands formed in the Stranski-Krastanov mode with thin AlAs/InAlAs layers have been studied. It ...

    N. V. Kryzhanovskaya, A. G. Gladyshev, S. A. Blokhin, M. V. Maksimov… in Semiconductors (2005)

  13. No Access

    Article

    The optical properties of heterostructures with quantum-confined InGaAsN layers on a GaAs substrate and emitting at 1.3–1.55 μm

    Under study is the photoluminescence of two types of MBE-grown heterostructures with quantum-confined InGaAsN/GaAs layers: (1) conventional InGaAsN quantum wells (QWs) in GaAs, and (2) heterostructures with an...

    N. V. Kryzhanovskaya, A. Yu. Egorov, V. V. Mamutin, N. K. Polyakov… in Semiconductors (2005)

  14. No Access

    Article

    Effect of nonradiative recombination centers on photoluminescence efficiency in quantum dot structures

    The influence of dislocations on photoluminescence (PL) intensity in structures with InAs-GaAs quantum dots (QD) has been studied. The structural characteristics of samples were studied by transmission electro...

    M. V. Maksimov, D. S. Sizov, A. G. Makarov, I. N. Kayander, L. V. Asryan… in Semiconductors (2004)

  15. No Access

    Article

    Optical and structural properties of InAs quantum dot arrays grown in an InxGa1−x As matrix on a GaAs substrate

    Structural and optical properties of InAs quantum dots (QDs) deposited on the surface of a thick InGaAs metamorphic layer grown on a GaAs substrate have been studied. The density and lateral size of QDs are sh...

    N. V. Kryzhanovskaya, A. G. Gladyschev, S. A. Blokhin, Yu. G. Musikhin… in Semiconductors (2004)

  16. No Access

    Article

    Structural and optical properties of heterostructures with InAs quantum dots in an InGaAsN quantum well grown by molecular-beam epitaxy

    Results obtained in a study of the structural and optical properties of GaAs-based heterostructures with InAs quantum dot layers overgrown with InGaAsN quantum wells are presented. Transmission electron micros...

    I. P. Soshnikov, N. V. Kryzhanovskaya, N. N. Ledentsov, A. Yu. Egorov… in Semiconductors (2004)

  17. No Access

    Article

    Temperature characteristics of low-threshold high-efficiency quantum-dot lasers with the emission wavelength from 1.25 to 1.29 µm

    The temperature behavior of the operation characteristics of low-threshold (the threshold current density is below 100 A/cm2) high-efficiency (differential quantum efficiency is as high as 88%) injection laser he...

    I. I. Novikov, M. V. Maksimov, Yu. M. Shernyakov, N. Yu. Gordeev… in Semiconductors (2003)

  18. No Access

    Article

    Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode

    The effect of the growth temperature on the density, lateral size, and height of InAs-GaAs quantum dots (QD) has been studied by transmission electron microscopy. With the growth temperature increasing from 45...

    N. A. Cherkashin, M. V. Maksimov, A. G. Makarov, V. A. Shchukin… in Semiconductors (2003)

  19. No Access

    Article

    High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates

    Diode lasers based on several layers of self-organized quantum dots (QD) on GaAs substrates were studied. The lasing wavelength lies in the range λ=1.25–1.29 μm, depending on the number of QD layers and optica...

    S. S. Mikhrin, A. E. Zhukov, A. R. Kovsh, N. A. Maleev, A. P. Vasil’ev… in Semiconductors (2002)

  20. No Access

    Article

    The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix

    Structures with In(Ga)As quantum dots in the GaAs matrix obtained using molecular-beam epitaxy are investigated using photoluminescence (PL) measurements and transmission electron microscopy. The structures we...

    D. S. Sizov, M. V. Maksimov, A. F. Tsatsul’nikov, N. A. Cherkashin… in Semiconductors (2002)

previous disabled Page of 3