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Article
Schottky barrier height lowering induced by CoSi2 nanostructure
CoSi2 nanostructures were formed through thermal agglomeration by annealing ultrathin Co film on Si substrate at high temperatures. The characteristics of the Schottky diodes with CoSi2 nanostructures capped by a...
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Article
The effect of pre-annealing of sputtered ZnO seed layers on growth of ZnO nanorods through a hydrothermal method
Oriented ZnO nanorods were grown on ion-beam-sputtered ZnO seed layers through a hydrothermal approach without any metal catalyst. The sputtered ZnO seed layers were pre-annealed at different temperatures befo...
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Article
Silicidation of Ni(Yb) Film on Si(001)
The influence of the addition of Yb to Ni on the silicidation of Ni was investigated. The Ni(Yb) film was deposited on a Si(001) substrate by co-sputtering, and silicidation was performed by rapid thermal anne...
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Article
Linear growth of Ni2Si thin film on n+/p junction at low temperature
Nickel mono-silicide has been considered a promising silicide candidate for sub-90 nm nodes of integrated circuits manufacturing. To form high-quality nickel mono-silicide as source/drain contact electrodes, a...
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Article
Comparison of Ru/Ta and Ru/TaN as Barrier Stack for Copper Metallization
The diffusion barrier properties for ultrathin Ru/Ta and Ru/TaN bilayer structure as the copper diffusion barrier are compared. Cu, Ru, Ta and TaN thin films are deposited by using the ion beam sputtering tech...
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Article
Arsenic redistribution induced by low-temperature Ni silicidation at 450°C on shallow junctions
Redistribution of arsenic (As) during silicidation of a 13-nm Ni film on an n+/p junction at 450°C is investigated. NiSi formation is observed by x-ray diffraction, micro-Raman scattering spectroscopy, and Ruther...
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Article
The reaction characteristics of ultra-thin Ni films on undoped and doped Si (100)
Reaction characteristics of ultra-thin Ni films (5 nm and 10 nm) on undoped and highly doped (As-doped and B-doped) Si (100) substrates are investigated in this work. The sheet resistance (Rs) measurements con...
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Article
Process and Mechanism of CoSi2/Si Solid Phase Epitaxy by Multilayer Reaction
A multilayer structure of Co/a-Si/Ti/Si(100) together with Co/Ti/Si(100) is applied to investigate the process and mechanism of CoSi2 epitaxial growth on a Si(100) substrate. The experimental results show that by...
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Article
Formation and Characterization of Spe Grown Ultra-Thin Cobalt Disilicide Film
Ultra-thin epitaxial CoSi2 films formed by Co(3∼5nm)/Ti(1 nm)/Si(100) and Co(3∼5nm)/Si(lnm)/Ti(Inm)/Si are studied. The multilayers are deposited by ion-beam sputtering. Rapid thermal annealing (RTA) is used for ...
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Article
A Beem Study of PtSi Schottky Contacts on Ion-Milled Si
Ballistic electron emission microscopy (BEEM) and deep level transient spectroscopy (DLTS) have been used to study the effects of substrate damage introduced by an ion-milling process in PtSi/n-Si Schottky con...
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Article
Study on Thermal Stability of Thin CoSi2 Film
The thermal stability of thin CoSi2 films formed from four layered structures: Co/Si, TiN/Co/Si, Co/Ti/Si and TiN/Co/Ti/Si has been studied using four-point-probe (FPP), TEM and RBS/channeling. It is found that t...
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Article
Do** properties of the Ion-Beam-Sputtered SiGe Film
The ion-beam-sputtered polycrystalline SiGe film and its do** properties have been studied. Boron and phosphorus have been doped into the sputtered poly-SiGe film by ion implantation and diffusion. To activa...
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Article
Epitaxial Growth of CoSi2/Si Hetero-Structure by Solid State Interaction of Co/Ti/Si Multilayer
A new method of epitaxial growth of CoSi2 film on Si substrate by ternary solid state interaction is investigated. XRD, RBS and TEM show that single-crystalline CoSi2 can be formed on both Si (111) and (100) subs...
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Article
Preferential Growth of CoSi2 in Co/Si Solid State Interaction by Rapid Thermal Annealing
The CoSi2 thin film growth by Co/Si solid state interaction was investigated. The electrical and crystal properties of the films formed on (111) and (100) Si substrates were characterized after a rapid thermal an...
