Abstract
The thermal stability of thin CoSi2 films formed from four layered structures: Co/Si, TiN/Co/Si, Co/Ti/Si and TiN/Co/Ti/Si has been studied using four-point-probe (FPP), TEM and RBS/channeling. It is found that thermal instability can be influenced by the polycrystalline structure in CoSi2. Growing epitaxial CoSi2 film on Si (100) using TiN cap** and Ti interfacial layers can improve the thermal stability of thin CoSi2 film.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
S. L. Hsia, T. Y. Tan, P. Smith, and G. E. McGuire, J. Appl. Phys., 72 (5), 1864 (1992).
S. P. Murarka and S. Vaidya, J. Appl. Phys., 56 (12), 3404 (1984).
S. P. Murarka, C. C. Chang, and A. C. Adams, J. Vac. Sci. Technol., B5 (4), 865 (1987).
L. Van den Hove, R. Wolters, K. Maex, R. De Keersmaeeker, and G. Declerck, J. Vac. Sci. Technol., B4, 1358 (1986).
C. M. Osburn, Q. F. Wang, M. Kellam, C. Canovai, P. L. Smith, G. E. McGuire Z. G. **ao, and G. A. Rozgonyi, Appl. Surf. Sci., 53, 291 (1991).
Z. G. **ao, G. A. Rozgonyi, C. A. Canovai, and C. M. Osburn, J. Mater. Res., 7(2), 269, (1992).
B. Z. Li, Z. G. Gu, G. P. Ru, J. Liu, and G. B. Jiang, VMIC-96, Proc., Santa Clara, CA 187 (1996).
B. Z. Li, W. J. Wu, K. Shao, Z. G. Gu, G. B. Jiang, W. N. Wang, H. Fang, Z. Sun, P. Liu, and Z. Y. Zhou, Mat. Res. Soc. Symp. Proc., 337, 449 (1994).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Gu, ZG., Chu, P.K., Liu, J. et al. Study on Thermal Stability of Thin CoSi2 Film. MRS Online Proceedings Library 441, 273–276 (1996). https://doi.org/10.1557/PROC-441-273
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-441-273