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Article
Characterization and Integration in Cu Damascene Structures of AURORA, an Inorganic Low-k Dielectric
AURORA films, which have a Si-O-Si network with–CH3 terminations, were characterized and integrated into Cu single damascene structures. The relatively low carbon concentration (∼ 20%) and the very small pore ...
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Article
A Beem Study of PtSi Schottky Contacts on Ion-Milled Si
Ballistic electron emission microscopy (BEEM) and deep level transient spectroscopy (DLTS) have been used to study the effects of substrate damage introduced by an ion-milling process in PtSi/n-Si Schottky con...
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Article
The Influence of Ti Cap** Layers on CoSi2 Formation in the Presence of Interfacial Oxide
In this work, we will show that a reactive Ti cap** layer can reduce oxide layers that are present at the cobalt-silicon interface. We have used a thin, chemically grown oxide to have a well-controlled form ...
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Article
Influence of SiGe Thickness on the Co/SiGe/Si Solid State Reaction
The effect of the thickness of the SiGe layers in the Co-SiGe/Si reaction is investigated. Formation of the disilicide phase is retarded when compared to the reaction of Co with pure Si substrates. This delay ...
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Article
Microstructural studies by transmission electron microscopy of the formation of ultrathin PtSi layers with novel silicidation processes
Ultrathin and uniform Pt-silicide layers are prepared by electron beam evaporation on a heated silicon substrate and by magnetron sputtering at room temperature followed by rapid thermal annealing (RTP) and se...
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Article
Electron Microscopic Studies of Co- and Ti-Germanosilicide Films Formed on SiGe Layers
Cobalt films are sputter deposited on Si0.8Ge0.2 layers grown epitaxially on Si substrates. Compared with the silicidation on pure silicon, there is a retardation of the disilicide formation in the SiGe case. The...
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Article
New Approaches for Formation of Ultra-Thin PtSi Layers for Infrared Applications
In this work we describe the formation of ultra-thin PtSi layers using sputtering for metal deposition and RTP for the silicidation. The problem associated with the controllability of deposition of ultra-thin ...
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Article
Microstructural Studies of Co Silicide Layers Formed on SiGe and SiGeC
Transmission electron microscopy is used to investigate the structural development as a function of the annealing temperature of Co-silicides prepared on SiGe and SiGeC. The transition temperature from Co(SiGe...
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Article
Characterization of Ultra-Thin PtSi Films for Infrared Detectors
Transmission electron microscopy and grazing incidence X-ray diffraction are used for the structural characterization of ultra-thin PtSi layers on (100) silicon prepared by a two-step rapid thermal annealing p...
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Article
Titanium Silicidation and Secondary Defect Annihilation in Ion Beam Processed SiGe Layers
The secondary defect annihilation by one- and two-step titanium silicidation in SiGe layers, formed by high dose Ge implantation, has been studied systematically as a function of the Ge fluence, implantation e...
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Article
Structural and Electrical Characterization of FeSix – Layers (1≤ X ≤2) Prepared by RTP of Fe Layers Sputtered on Si (100)
β-FeSi2 is a semiconductor with a potential for photovoltaic and optoelectronic applications. The preparation of β-FeSi2-layers by rapid thermal processing (RTP) of Fe layers on silicon is investigated in this pa...
