Abstract
CoSi2 nanostructures were formed through thermal agglomeration by annealing ultrathin Co film on Si substrate at high temperatures. The characteristics of the Schottky diodes with CoSi2 nanostructures capped by a Pt layer were measured and fitted using thermionic emission theory. All the diodes have a ideality factor less than 1.1. The results show that the Schottky barrier height of these diodes significantly decreases as the annealing temperature for CoSi2 agglomeration increases. The barrier height lowering is correlated with the agglomeration of CoSi2 film and the formation of CoSi2 nano-islands. The thermal field emission may be the major reason to cause barrier lowering. Although the Schottky contact interface consists of both CoSi2 nano-islands and Pt film whose individual contact barrier height to Si is very different, the current-voltage-temperature measurements reveal that the interface homogeneity is not degraded as expected. The study demonstrates that the CoSi2 nanostructures can both lower the Schottky barrier height and form an ideal Schottky contact with a Pt cap** layer.
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Jiang, YL., Qu, XP., Ru, GP. et al. Schottky barrier height lowering induced by CoSi2 nanostructure. Appl. Phys. A 99, 93–98 (2010). https://doi.org/10.1007/s00339-009-5516-4
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DOI: https://doi.org/10.1007/s00339-009-5516-4