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A Beem Study of PtSi Schottky Contacts on Ion-Milled Si

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Abstract

Ballistic electron emission microscopy (BEEM) and deep level transient spectroscopy (DLTS) have been used to study the effects of substrate damage introduced by an ion-milling process in PtSi/n-Si Schottky contacts. Argon ions with well-defined energies of 300, 500, 700, 1000, 1500 eV were used to sputter n-type Si substrates in an ion beam sputtering system before metal deposition and silicide formation. Histograms of the PtSi/n-Si Schottky barrier height (SBH) measured by BEEM show that the mean SBH decreases with increasing ion energy, which can be explained as a result of donor-like defects that are introduced by the ion milling treatment. From DLTS measurements, we found direct evidence for the presence of such defects.

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References

  1. See for example, C. J. Mogab, Dry Etching, in VLSI Technology, ed. S. M. Sze (McGraw-ill, 1983, Auckland).

  2. S. J. Fonash, J. Electrochem. Soc. 66 3885 (1990).

    Article  Google Scholar 

  3. S. Ashok, T. P. Chow and B. J. Baliga, Appl. Phys. Lett. 42, 687 (1983).

    Article  CAS  Google Scholar 

  4. F. K. Moghadam and X. C. Mu, IEEE Trans. Electron Devices ED-36, 1602 (1989).

    Article  Google Scholar 

  5. E. Grusell, S. Berg and L. P. Andersson, J. Electrochem. Soc. 127, 1573 (1980).

    Article  CAS  Google Scholar 

  6. P. N. K. Deenapanray, F. D. Auret and G. Myburg, J Vac. Sci. Technol. B, 16 (1873).

  7. R. T. Tung, Phys. Rev. B, 45 13509 (1992).

    Article  CAS  Google Scholar 

  8. W. J. Kaiser and L. D. Bell, Phys. Rev. Lett. 66 1406 (1988).

    Article  Google Scholar 

  9. L. D. Bell and W. J. Kaiser, Phys. Rev. Lett. 66 2368 (1988).

    Article  Google Scholar 

  10. J. G. Couillard, A. Davies and H. G. Craighead, .J. Vac. Sci. Technol. B10, 3112 (1992).

    Article  Google Scholar 

  11. L. Quattropani, K. Solt, P. Niedermann, I. M. -Aprile, O. Fischer and T. Pavelka, Appl. Surf Sci. 70/71, 391 (1993).

    Article  Google Scholar 

  12. R. A. Donaton, S. **, H. Bender, M. Zagrebnov, K. Baert, K. Maex, A. Vantomme, G. Langouche, Microelectron. Eng. 37/38, 507 (1997).

    Article  CAS  Google Scholar 

  13. S. M. Sze, Physics of Semiconductor Devices (Wiley, 1981).

    Google Scholar 

  14. J. M. Shannon, Appl. Phys. Lett. 24, 369 (1974).

    Article  CAS  Google Scholar 

Download references

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Authors and Affiliations

  1. Department of Electronic Engineering, Fudan University, Shanghai, 200433, China

    Guo-** Ru, K. Maex, **n-** Qu & Shi-Yang Zhu

  2. Department of Solid State Science, University of Gent, B-9000, Gent, Belgium

    C. Detavernier, A. Blondeel, P. Clauws, R. L. Van Meirhaeghe & F. Cardon

  3. IMEC, Kapeldreef 75, B-3001, Leuven, Belgium

    R. A. Donaton

  4. INSYS, K U. Leuven, B-3001, Leuven, Belgium

    Bing-Zong Li

Authors
  1. Guo-** Ru
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  2. C. Detavernier
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  3. R. A. Donaton
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  4. A. Blondeel
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  5. P. Clauws
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  6. R. L. Van Meirhaeghe
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  7. F. Cardon
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  8. K. Maex
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  9. **n-** Qu
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  10. Shi-Yang Zhu
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  11. Bing-Zong Li
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Correspondence to Guo-** Ru.

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Ru, GP., Detavernier, C., Donaton, R.A. et al. A Beem Study of PtSi Schottky Contacts on Ion-Milled Si. MRS Online Proceedings Library 564, 201–206 (1999). https://doi.org/10.1557/PROC-564-201

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  • DOI: https://doi.org/10.1557/PROC-564-201

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