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  1. No Access

    Article

    The influence of ZnO seed layers on n-ZnO nanostructure/p-GaN LEDs

    Light-emitting diodes (LEDs) were formed by hydrothermally growing n-ZnO nanostructures on p-GaN with or without seed layers. The performance of the fabricated LEDs was studied. The seed layers not only have a...

    Jia-Hong Wu, Shu-Yi Liu, Shuti Li, Yu-long Jiang, Guo-** Ru… in Applied Physics A (2012)

  2. No Access

    Article

    Study on algorithms of low SNR inversion of T 2 spectrum in NMR

    The method of regularization factor selection determines stability and accuracy of the regularization method. A formula of regularization factor was proposed by analyzing the relationship between the improved ...

    Feng Lin, Zhu-Wen Wang, **g-Ye Li, Xue-Ang Zhang, Yu-Long Jiang in Applied Geophysics (2011)

  3. No Access

    Article

    Schottky barrier height lowering induced by CoSi2 nanostructure

    CoSi2 nanostructures were formed through thermal agglomeration by annealing ultrathin Co film on Si substrate at high temperatures. The characteristics of the Schottky diodes with CoSi2 nanostructures capped by a...

    Yu-Long Jiang, **n-** Qu, Guo-** Ru, Bing-Zong Li in Applied Physics A (2010)

  4. No Access

    Article

    Silicidation of Ni(Yb) Film on Si(001)

    The influence of the addition of Yb to Ni on the silicidation of Ni was investigated. The Ni(Yb) film was deposited on a Si(001) substrate by co-sputtering, and silicidation was performed by rapid thermal anne...

    Jia Luo, Yu-Long Jiang, Guo-** Ru, Bing-Zong Li… in Journal of Electronic Materials (2008)

  5. No Access

    Article

    Linear growth of Ni2Si thin film on n+/p junction at low temperature

    Nickel mono-silicide has been considered a promising silicide candidate for sub-90 nm nodes of integrated circuits manufacturing. To form high-quality nickel mono-silicide as source/drain contact electrodes, a...

    Yu-Long Jiang, Guo-** Ru, **n-** Qu, Bing-Zong Li… in Journal of Materials Research (2006)

  6. No Access

    Article

    Arsenic redistribution induced by low-temperature Ni silicidation at 450°C on shallow junctions

    Redistribution of arsenic (As) during silicidation of a 13-nm Ni film on an n+/p junction at 450°C is investigated. NiSi formation is observed by x-ray diffraction, micro-Raman scattering spectroscopy, and Ruther...

    Yu-Long Jiang, Guo-** Ru, **n-** Qu, Bing-Zong Li… in Journal of Electronic Materials (2006)

  7. No Access

    Article

    The reaction characteristics of ultra-thin Ni films on undoped and doped Si (100)

    Reaction characteristics of ultra-thin Ni films (5 nm and 10 nm) on undoped and highly doped (As-doped and B-doped) Si (100) substrates are investigated in this work. The sheet resistance (Rs) measurements con...

    Yu-Long Jiang, Guo-** Ru, Jian-Hai Liu, **n-** Qu… in Journal of Electronic Materials (2004)