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1. MOS Capacitors, MOS Transistors, and Charge-Transfer Devices

   The chapter has two main parts: the first one addresses the functioning of the MOS capacitor and MOS transistor, considering the case of a p-type...

   Massimo Rudan, Susanna Reggiani, Giorgio Baccarani in Springer Handbook of Semiconductor Devices

   Chapter 2023
   

2. MOS-Only and MOS-C Circuits

   The world of analog IC, the design of which does not include external passive components such as resistances, capacitances, or inductances, has...

   Hakan Kuntman, Deniz Özenli in Trends in Circuit Design for Analog Signal Processing

   Chapter 2022
   

3. MOS Technologies for Circuit Integration

   Since about 1985, MOS technologies have gained the most significant economic importance for the production of digital and also analogue integrated...

   Ulrich Hilleringmann in Silicon Semiconductor Technology

   Chapter 2023
   

4. Leistungs-MOS-Feldeffekttransistor

   Dargestellt wird die Extraktion der SPICE-Modellparameter des Leistungs-MOS-Feldeffekttransistors IRF 150. Statische Parameter wie die...

   Peter Baumann in Parameterextraktion bei Halbleiterbauelementen

   Chapter 2024
   

5. CDBA-Based MOS-C Quadrature Oscillator

   In this article, MOS-C resistor-based quadrature sinusoidal oscillator configuration is proposed. The proposed structure is appropriate for the MOS-C...

   Shekhar Suman Borah, Mourina Ghosh in VLSI, Microwave and Wireless Technologies

   Conference paper 2023
   

6. Influence of shear strain on the electronic properties of monolayers MoS₂, WS₂, and MoS₂/WS₂ vdW heterostructure

   Context

   This study investigates the dynamic stability of monolayers MoS ₂ , WS ₂ , and MoS ₂ /WS ₂ van der Waals heterostructures (vdWHs) and the influence...

   Yimin Sun in Journal of Molecular Modeling

   Article 28 March 2024
   

7. Hydrogen-Terminated Diamond MOS Capacitors, MOSFETs, and MOSFET Logic Circuits

   Wide-bandgap semiconductor diamond has been studied to develop high-power, high-frequency, and high-temperature electronic devices. However, their...

   Jiangwei Liu, Yasuo Koide in Novel Aspects of Diamond II

   Chapter 2024
   

8. MOS-Feldeffekttransistoren

   Beschrieben wird die Extraktion der Modellparameter von N-Kanal- und P-Kanal-MOSFET aus dem CMOS-Array CA 3600. Einige Parameter wie die...

   Peter Baumann in Parameterextraktion bei Halbleiterbauelementen

   Chapter 2024
   

9. Accumulation and Suppression of Radiation-Induced Charge in MOS Structures

   Abstract

   It is shown that when a MOS (metal–oxide–semiconductor) structure is simultaneously exposed to radiation and the high-field injection of...

   D. V. Andreev in Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques

   Article 01 April 2024
   

10. Surface Functionalization of 2D MOs for Enhanced Biocompatibility and Biomedical Applications

    Metal oxides (MOs) like titanium dioxide (TiO2), zinc oxide (ZnO), and iron oxide (Fe2O3) possess unique characteristics such as high surface area,...

    Mohamed Abdelmonem, Emmellie Laura Albert, ... Che Azurahanim Che Abdullah in Emerging Applications of Novel Nanoparticles

    Chapter 2024
    

11. MOS-Feldeffekttransistoren

    Die gestellten Fragen beziehen sich zunächst auf die Funktion und die Kennlinien von Anreicherungs- und Verarmungs-MOSFET. Die gegebenen Antworten...

    Peter Baumann in Prüfungsfragen zur Elektronik

    Chapter 2023
    

12. Leistungs-MOS-Feldeffekttransistor

    Dargestellt wird die Extraktion der SPICE-Modellparameter des Leistungs-MOS-Feldeffekttransistors IRF 150. Statische Parameter wie die...

    Peter Baumann in Parameterextraktion bei Halbleiterbauelementen

    Chapter 2023
    

13. Multigate MOS-HEMT

    Gallium nitride (GaN) based High-Electron-Mobility Transistors (HEMTs), and in particular, aluminum gallium nitride (AlGaN)/GaN devices have become a...

    Atanu Kundu, Mousiki Kar in HEMT Technology and Applications

    Chapter 2023
    

14. Energy transfer driven brightening of MoS₂ by ultrafast polariton relaxation in microcavity MoS₂/hBN/WS₂ heterostructures

    Energy transfer is a ubiquitous phenomenon that delivers energy from a blue-shifted emitter to a red-shifted absorber, facilitating wide photonic...

    Zehua Hu, Tanjung Krisnanda, ... Qihua **ong in Nature Communications

    Article Open access 26 February 2024
    

15. Synthesis of uniform two-dimensional MoS₂ films via thermal evaporation

    Two-dimensional (2D) molybdenum disulfide (MoS ₂ ) holds great potential for various applications such as electronic devices, catalysis, lubrication,...

    Xue-Wei Lu, Zhewei Li, ... Liying Jiao in Nano Research

    Article 19 September 2023
    

16. MOS-Feldeffekttransistoren

    Beschrieben wird die Extraktion der Modellparameter von N-Kanal- und P-Kanal-MOSFET aus dem CMOS-Array CA 3600. Einige Parameter wie die...

    Peter Baumann in Parameterextraktion bei Halbleiterbauelementen

    Chapter 2023
    

17. Characteristic analysis of the MoS₂/SiO₂ interface field-effect transistor with varying MoS₂ layers

    Molybdenum disulfide (MoS ₂ ) is a typical semiconductor two-dimensional atomic crystal material, which has excellent physical and electrical...

    Haixia Li, Youyong Li, ... Yanan Ni in Journal of Materials Science: Materials in Electronics

    Article 04 February 2023
    

18. Hydrothermally synthesized MoS₂ NFs toward efficient supercapacitor and fast photocatalytic degradation of MB

    MoS ₂ stands out as a distinctive material, owing to its two-dimensional structure, with promising potential across various domains notably in energy...

    Pankaj Suthar, Dinesh Patidar in Research on Chemical Intermediates

    Article 13 July 2024
    

19. An Overview of the NBTI Phenomenon in MOS Devices

    Abstract

    Based on the vast perusal, an overview on the negative bias temperature instability (NBTI) effect in metal oxide semiconductor (MOS) devices,...

    DhiaElhak Messaoud, Boualem Djezzar, Abdelkader Zitouni in Russian Microelectronics

    Article 01 October 2023
    

20. Facile synthesis of nanoflower-like MoS₂/C as anode for lithium-ion batteries

    MoS ₂ nanosheets consist of multiple S-Mo-S trilayers with large interlayer spacing, which could allow facile Li-ion insertion/extraction. However, MoS

    Zhe Wang, Yongjian Cui, ... Hailong Wang in Journal of Solid State Electrochemistry

    Article 09 January 2024