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Characteristic analysis of the MoS2/SiO2 interface field-effect transistor with varying MoS2 layers

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Abstract

Molybdenum disulfide (MoS2) is a typical semiconductor two-dimensional atomic crystal material, which has excellent physical and electrical properties and so shows great potential in Nano-electronic and optical applications. The regulation of channel characteristics is a key problem in practical application. In this paper, the MoS2 FET are studied with respect to the number of MoS2 layers in the channel. In the study of direct tunneling characteristics, the effects of image potential and no parabolic linearity of the energy band are considered. The results show that with the increase in the number of MoS2 layers, the direct tunneling current increases and the threshold voltage decreases. In addition, a MoS2 FET with a single layer MoS2 structure can obtain a low subthreshold swing (70 mV/dec). MoS2-based devices can solve the problem that the switching speed of traditional silicon-based devices cannot be effectively improved at the nanoscale. Our results show that varying MoS2 layers could regulate the channel characteristics and improve its performance.

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The authors declare that data supporting the findings of this study are available within the article [and its supplementary information files].

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Acknowledgements

This work was supported by the National Natural Science Foundation of China under Grant [Grant no. 61774014]; the Financial aid for the “QINGLAN project” in Jiangsu Province[Grant no. 20210310]; the Special fund project for the transformation of scientific and technological achievements in Jiangsu Province [Grant no. BA2021077]; the Natural Science Foundation Surface Project of the Jiangsu Suqian of China [Grant no. K202013]; and the School-level Scientific Research and Innovation Team of Suqian University [Grant no. 2021td02].

Funding

Funding was provided by Innovative Research Group Project of the National Natural Science Foundation of China (Grant no. 61774014), the “QINGLAN project” in Jiangsu Province (Grant no. 20210310), the Special fund project for the transformation of scientific and technological achievements in Jiangsu Province (Grant no. BA2021077), the Natural Science Foundation Surface Project of the Jiangsu Suqian of China (Grant no. K202013), Science and Technology Support Plan for Youth Innovation of Colleges and Universities of Shandong Province of China (Grant no. 2021td02).

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Authors and Affiliations

  1. School of Information Engineering, Suqian University, Suqian, 223800, People’s Republic of China

    Haixia Li & Yanan Ni

  2. College of Nano Science & Technology, Soochow University, Suzhou, 215006, People’s Republic of China

    Youyong Li

  3. Jucan Photoelectric Technology (Suqian) Co., Ltd, Suqian, 223800, People’s Republic of China

    Han Jiang

  4. School of Computer & Communication Engineering, University of Science & Technology Bei**g, Bei**g, 100083, People’s Republic of China

    Lingfeng Mao

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  1. Haixia Li
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Contributions

All authors contributed to the study conception and design. Material preparation, data collection and analysis were performed by HL, YL, HJ and LM. The first draft of the manuscript was written by YN and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.

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Correspondence to Haixia Li.

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Li, H., Li, Y., Jiang, H. et al. Characteristic analysis of the MoS2/SiO2 interface field-effect transistor with varying MoS2 layers. J Mater Sci: Mater Electron 34, 427 (2023). https://doi.org/10.1007/s10854-023-09869-8

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