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Hydrogen-Terminated Diamond MOS Capacitors, MOSFETs, and MOSFET Logic Circuits

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Novel Aspects of Diamond II

Part of the book series: Topics in Applied Physics ((TAP,volume 149))

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Abstract

Wide-bandgap semiconductor diamond has been studied to develop high-power, high-frequency, and high-temperature electronic devices. However, their development has been limited by the low free carrier density that occurs in diamond at room temperature because of the high activation energies of p-type boron and n-type phosphorus dopants. Fortunately, hydrogen-terminated diamond (H-diamond) can accumulate two-dimensional hole gases on its surface with a high free carrier density. In this chapter, we review our recent progress in the fabrication of H-diamond metal–oxide–semiconductor (MOS) capacitors, MOS field-effect transistors (MOSFETs), and MOSFET logic circuits. Specifically, the leakage current densities for different oxide insulators on H-diamond and the capacitance–voltage properties for the Al2O3/H-diamond MOS capacitors are discussed. Planar-type, T-type, and triple-gate fin-type H-diamond MOSFETs are reviewed, and the fabrication and performance of depletion- and enhancement-mode H-diamond MOSFETs and logic circuits are summarized.

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Acknowledgements

This work was in part supported by the Japan Society for the Promotion of Science (JSPS) KAKENHI Grants JP23K03966 and JP20H00313, and in part by the Nanotechnology Platform Program, the Ministry of Education, Culture, Sports, and Technology (MEXT), Japan.

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Authors and Affiliations

  1. Next-Generation Semiconductor Group, Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Ibaraki, Japan

    Jiangwei Liu & Yasuo Koide

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  1. Jiangwei Liu
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  2. Yasuo Koide
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Correspondence to Jiangwei Liu .

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Editors and Affiliations

  1. School of Physics & Astronomy, Parade, Cardiff University, Cardiff, UK

    Soumen Mandal

  2. Department of Chemistry, IMO-IMOMEC Hasselt University, Diepenbeek, Belgium

    Nianjun Yang

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Liu, J., Koide, Y. (2024). Hydrogen-Terminated Diamond MOS Capacitors, MOSFETs, and MOSFET Logic Circuits. In: Mandal, S., Yang, N. (eds) Novel Aspects of Diamond II. Topics in Applied Physics, vol 149. Springer, Cham. https://doi.org/10.1007/978-3-031-47556-6_13

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