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  1. No Access

    Article

    The Ron receptor tyrosine kinase activates c-Abl to promote cell proliferation through tyrosine phosphorylation of PCNA in breast cancer

    Multiple growth pathways lead to enhanced proliferation in malignant cells. However, how the core machinery of DNA replication is regulated by growth signaling remains largely unclear. The sliding clamp prolif...

    H Zhao, M-S Chen, Y-H Lo, S E Waltz, J Wang, P-C Ho, J Vasiliauskas, R Plattner… in Oncogene (2014)

  2. No Access

    Article

    Polymer Microvalve Based on Anisotropic Expansion of Polypyrrole

    An actuator fabricated from the conductive polymer polypyrrole using microfabrication techniques is presented. This actuator utilizes the anisotropic volume change, which occurs under application of an electri...

    Yevgeny Berdichevsky, Y.-H. Lo in MRS Online Proceedings Library (2011)

  3. No Access

    Article

    Selective activation of NFAT by promyelocytic leukemia protein

    Promyelocytic leukemia (PML) protein is a tumor suppressor with complicated action mechanisms not yet fully understood. In this study, we found that the nuclear factor of activated T cell (NFAT) is an unexpect...

    Y-H Lo, C-C Wu, H-M Shih, M-Z Lai in Oncogene (2008)

  4. No Access

    Article

    Fabrication and Evaluation of Conducting Polymer Nanowire Heterostructures

    Conducting polymer nanostructures such as nanofibers and nanotubes have potential uses in a variety of applications including electronic and photonic devices and sensors. Conducting polymers have also been use...

    Yevgeny Berdichevsky, Y.-H. Lo in MRS Online Proceedings Library (2005)

  5. No Access

    Article

    Compliant Substrates With an Embedded Twist Boundary

    In this article, we propose a new model to explain how heteroepitaxial layers grown on a twist-bonded thin layer may have a significantly reduced number of threading dislocations even if the strain in the epit...

    Y. H. Lo, Z. H. Zhu in MRS Online Proceedings Library (1998)

  6. No Access

    Article

    Flow Modulation Epitaxial Lateral Overgrowth of Gallium Nitride on Masked 6H-Silicon Carbide and Sapphire Surfaces

    Selective Area Flow Modulation Epitaxial growth of GaN is carried out in a low pressure Organometallic Vapor Phase Epitaxy reactor. This process is known to enhance reactant surface migration lengths on patter...

    J. A. Smart, E. M. Chumbes, L. N. Srivatsa, Y. H. Lo… in MRS Online Proceedings Library (1998)

  7. No Access

    Article

    Characterization of Single-Crystal 3C-SIC Epitaxial Layers on SI Substrates

    In this paper we discuss the growth and characterization of 3C-SiC epitaxial layers grown on both a Si substrate as well as on a novel substrate. The growth uses a typical three step process. First an etch of ...

    S. E. Saddow, M. E. Okhusyen, M. S. Mazzola, M. Dudley… in MRS Online Proceedings Library (1998)

  8. No Access

    Article

    Growing Pseudomorphic Layers Beyond the Critical Thickness using Free-Standing Compliant Substrates

    We demonstrated the high quality growth of exceedingly thick pseudomorphic layers on free-standing, compliant substrates using InGaAs and GaAs materials. A 1% compressively strained InGaAs layer was grown on a...

    C.L. Chua, W.Y. Hsu, F. Ejeckam, A. Tran, Y.H. Lo in MRS Online Proceedings Library (1993)

  9. No Access

    Article

    Extended Pseudomorphic Limits Using Compliant Substrates

    We propose a new approach, growth on compliant substrates, to achieve extended pseudomorphic limits. The compliant substrate can be approximately achieved with a corner supported membrane structure. Both therm...

    Y. H. Lo, W. J. Schaff, D. Teng in MRS Online Proceedings Library (1992)

  10. No Access

    Article

    Low Pressure Omcvd Growth of GaAs on InP for Fet and Quantum Well Laser Fabrication

    Gallium arsenide epitaxial layers with excellent morphology have been grown by organometallic chemical vapor deposition (OMCVD) on (100) and 2-3° off (100) InP substrates by a modified two-step growth commonly...

    R. Bhat, Y-H. Lo, C. Caneau, C. J. Chang-Hasnain… in MRS Online Proceedings Library (1989)

  11. No Access

    Article

    Raman Scattering Spectrum Along a Bevel Etched GaAs on Si, Tem Study and GaAs P-I-N Photodetector on Si

    Raman scattering is measured along a bevel etched GaAs epitaxial film grown on Si by molecular beam epitaxial (MBE). From the correlation length profile of Raman scatteringmost dislocation lines are confined i...

    Y. H. Lo, M.-N. Charasse, H. Lee, D. Vakhshoori, Y. Huang… in MRS Online Proceedings Library (1987)