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    Characterization of Single-Crystal 3C-SIC Epitaxial Layers on SI Substrates

    In this paper we discuss the growth and characterization of 3C-SiC epitaxial layers grown on both a Si substrate as well as on a novel substrate. The growth uses a typical three step process. First an etch of ...

    S. E. Saddow, M. E. Okhusyen, M. S. Mazzola, M. Dudley… in MRS Online Proceedings Library (1998)