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  1. No Access

    Article

    Disbelief is a distinct doxastic attitude

    While epistemologists routinely employ disbelief talk, it is not clear that they really mean it, given that they often equate disbelieving p with believing ¬p. I argue that this is a mistake—disbelief is a doxast...

    J. A. Smart in Synthese (2021)

  2. No Access

    Article

    The Influence of Spontaneous and Piezoelectric Polarization on Novel AlGaN/GaN/InGaN Device Structures

    The strong spontaneous polarization and piezoelectric effects in the wurtzite III-nitride semiconductors lead to new possibilities for device design. In typical heterojunction field effect transistors these ef...

    B. E. Foutz, M. J. Murphy, O. Ambacher, V. Tilak… in MRS Online Proceedings Library (2011)

  3. No Access

    Article

    Optimization of High-Quality AlN Epitaxially Grown on (0001) Sapphire by Metal-Organic Vapor-Phase Epitaxy

    A systematic study is performed to optimize aluminum nitride (AlN) epilayers grown on (0001) sapphire by metal-organic vapor-phase epitaxy. Specifically, the impact of the AlN nucleation conditions on the crys...

    Y.A. **, K.X. Chen, F. Mont, J.K. Kim, E.F. Schubert… in Journal of Electronic Materials (2007)

  4. No Access

    Article

    Optical thin-film materials with low refractive index for broadband elimination of Fresnel reflection

    In 1880, by studying light passing through Earth's atmosphere, Lord Rayleigh mathematically demonstrated that graded-refractive-index layers have broadband antireflection characteristics1. Graded-index coatings w...

    J.-Q. **, Martin F. Schubert, Jong Kyu Kim, E. Fred Schubert… in Nature Photonics (2007)

  5. No Access

    Article

    Recombination dynamics in ultraviolet light-emitting diodes with Si-doped AlxGa1−xN/AlyGa1−yN multiple quantum well active regions

    Ultraviolet light-emitting diodes (UV LEDs) with AlxGa1−xN/AlyGa1−yN multiple quantum well (MQW) active regions, doped in the barriers with different Si do** level, show a sharp near band-edge emission (UV lumi...

    Kaixuan Chen, Y. A. **, F. W. Mont, J. K. Kim… in MRS Online Proceedings Library (2007)

  6. No Access

    Article

    Flow Modulation Epitaxial Lateral Overgrowth of Gallium Nitride on Masked 6H-Silicon Carbide and Sapphire Surfaces

    Selective Area Flow Modulation Epitaxial growth of GaN is carried out in a low pressure Organometallic Vapor Phase Epitaxy reactor. This process is known to enhance reactant surface migration lengths on patter...

    J. A. Smart, E. M. Chumbes, L. N. Srivatsa, Y. H. Lo… in MRS Online Proceedings Library (1998)

  7. No Access

    Article

    Optical and Structural Characterization of Arsenide/Phosphide Interfaces Formed by Flow Modulation Epitaxy

    Bulk GaAsP, 20Å-500Å GaAsP/GaInP single quantum wells and 70 Å period GaAsP/GaInP superlattices were deposited on GaAs substrates by Flow Modulation Epitaxy. In these structures, the disordered GaInP is lattic...

    D.T. Emerson, J.A. Smart, K.L. Whittingham, E.M. Chumbes… in MRS Online Proceedings Library (1995)

  8. No Access

    Article

    Optical and Structural Characterization of Arsenide/Phosphide Interfaces Formed by Flow Modulation Epitaxy

    Bulk GaAsP, 20Å-500Å GaAsP/GaInP single quantum wells and 70 Å period GaAsP/GaInP superlattices were deposited on GaAs substrates by Flow Modulation Epitaxy. In these structures, the disordered GaInP is lattic...

    D.T. Emerson, J.A. Smart, K.L. Whittingham, E.M. Chumbes… in MRS Online Proceedings Library (1995)

  9. No Access

    Article

    Information Systems: Technology, Economics, Applications

    J. A. Smart in Journal of the Operational Research Society (1976)