Abstract
We propose a new approach, growth on compliant substrates, to achieve extended pseudomorphic limits. The compliant substrate can be approximately achieved with a corner supported membrane structure. Both thermal equilibrium model and dynamic model considering strain relaxation are used to analyze the relations between the extended critical thickness and the substrate thickness. Preliminary experimental results of InGaAs grown on GaAs membranes seem to support the theories.
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Acknowledgement
The authors would like to thank Drs. M. N. Yoder and G. Wright in the Office of Naval Research for their encouragement and stimulating discussions. This work is supported by an ONR grant numbered N00014s-92s-Js-1006.
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Lo, Y.H., Schaff, W.J. & Teng, D. Extended Pseudomorphic Limits Using Compliant Substrates. MRS Online Proceedings Library 281, 191–196 (1992). https://doi.org/10.1557/PROC-281-191
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DOI: https://doi.org/10.1557/PROC-281-191