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Article
Current Status of the Quality of 4H-SiC Substrates and Epilayers for Power Device Applications
Interfacial dislocations (IDs) and half-loop arrays (HLAs) present in the epilayers of 4H-SiC crystal are known to have a deleterious effect on device performance. Synchrotron X-ray Topography studies carried ...
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Article
X-ray Topography Studies of Relaxation during the Homo-Epitaxy of 4H-SiC
A review is presented of Synchrotron X-ray Topography and KOH etching studies carried out on n type 4H-SiC offcut substrates before and after homo-epitaxial growth to study defect replication and strain relaxatio...
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Article
Studies of the Origins of Half-Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC
Synchrotron x-ray topography and KOH etching studies have been carried out on n-type 4H-SiC offcut substrates before and after homoepitaxial growth to study defect replication and strain relaxation processes and...
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Article
Defect Reduction Paths in SiC Epitaxy
This paper discusses formation mechanisms and potential paths to reduce defect density in current SiC epitaxy technology. Comprehensive optimization efforts have resulted in defect density measured by laser li...
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Article
The Durability of Various Crucible Materials for Aluminum Nitride Crystal Growth by Sublimation
Producing high purity aluminum nitride crystals by the sublimation-recondensation technique is difficult due to the inherently reactive crystal growth environment, normally at temperature in excess of 2100 °C....
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Article
Combined Application of Section and Projection Topography to Defect Analysis in PVT-Grown 4H-SiC
The combined application of section and projection topography carried out using synchrotron white beam radiation can be a powerful tool for the determination of the three-dimensional configurations of defects ...
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Article
Synchrotron Topography Studies of Growth and Deformation-Induced Dislocations in 4H-SiC
Synchrotron topography studies are presented of the behavior of growth dislocations and deformation-induced dislocations in 4H-SiC single crystals. The growth dislocations include those in threading orientatio...
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Article
Structural Characterization of Sic Epitaxial Layers Grown on Porous Sic Substrates
A layer of porous SiC was fabricated by surface anodization of commercial 4H and 6H-SiC (0001)Si face off-axis wafers. A 8.5 μm 4H–SiC epilayer was grown on porous SiC (PSC) substrates using atmospheric pressu...
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Article
The Effect of Surface Finish on the Dislocation Density in Sublimation grown SiC Layers
The effect of the seed surface finish on the dislocation density of sublimation grown silicon carbide was investigated. Growth on seeds that were polished down to 1 μm diamond paste resulted in the nucleation ...
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Article
Solution Growth and Characterization of Icosahedral Boron Arsenide (B12As2)
The crystallographic properties of bulk icosahedral boron arsenide (B12As2) crystals grown by precipitation from molten nickel solutions were characterized. Large crystals (5-8 mm) were produced by dissolving the...
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Article
Defect-Selective Etching of Icosahedral Boron Arsenide (B12As2) Crystals in Molten Potassium Hydroxide
The present work reports on the defect-selective etching (DSE) for estimating dislocation densities in icosahedral boron arsenide (B12As2) crystals using molten potassium hydroxide (KOH). DSE takes advantage of t...
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Article
Defect Reduction and Its Mechanism of Selective Ge Epitaxy in Trenches on Si(001) Substrates using Aspect Ratio Trap**
Defect-free germanium has been demonstrated in SiO2 trenches on silicon via aspect ratio trap**, whereby defects arising from lattice mismatch are trapped by laterally confining sidewalls. Results were achieved...
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Article
Progress in the Preparation of Aluminum Nitride Substrates from Bulk Crystals
Large (11-mm diameter) single-crystal AlN boules have been prepared using sublimationrecondensation growth. X-ray topography shows that substrates prepared from those boules have a dislocation density of less ...
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Article
Analysis of Dislocation Behavior in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals
Synchrotron White Beam X-ray Topography studies are presented of dislocation behavior and interactions in a new generation of one hundred millimeter diameter, 4H-SiC wafers grown using Physical Vapor Transport...
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Article
Synchrotron X-Ray Topography Study of Structural Defects and Strain in Epitaxial Structures of Yb- and Tm-Doped Potassium Rare-Earth Double Tungstates and Their Influence on Laser Performance
Monoclinic potassium rare-earth double tungstates [KRE(WO4)2, RE = Y, Lu, Yb; KREW] are well suited as hosts for active lanthanide ion (Ln3+) dopants for diode-pumped solid-state lasers, with particular interest ...
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Article
A Novel X-ray Diffraction –based Technique for Complete Stress State Map** of Packaged Silicon Dies
Fundamental understanding of the silicon stresses and their changes with traditional wire-bonded and flip chip packages is critical to address the performance and reliability improvements in new technologies. ...
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Article
Sublimation growth of aluminum nitride on silicon carbide substrate with aluminum nitride–silicon carbide alloy transition layer
The advantages of depositing AlN–SiC alloy transition layers on SiC substrates before the seeded growth of bulk AlN crystals were examined. The presence of AlN–SiC alloy layers helped to suppress the SiC decom...
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Article
Seeded growth of AlN crystals on nonpolar seeds via physical vapor transport
Seeded growth of AlN single crystals was demonstrated in an induction-heated, high-temperature reactor via a physical vapor transport (PVT) process. AlN seeds were prepared from a self-seeded boule containing ...
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Article
Intersecting Basal Plane and Prismatic Stacking Fault Structures in GaN/AlN epilayers on on-axis and off-cut 6H-SiC substrates
Comparative TEM studies have been carried out on GaN/AlN epifilms grown on both on-axis and off-cut 6H-SiC substrates to study the defects formed in the GaN/AlN films and the state of strain relaxation at the ...
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Article
Stress Evolution during the Early Stages of AlN Vapor Growth
The evolution of stress during the MOCVD growth of AlN thin films on sapphire substrates under both low and high temperature conditions has been evaluated. The final stress state of the films is assumed to con...
