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  1. No Access

    Article

    Reduction of Defect Density in Structures With InAs-GaAs Quantum Dots Grown at Low Temperature for 1.55 μm Range

    Transmission electron microscopy (TEM), and photoluminescence (PL) have been used to evaluate defects and the efficiency of defect-reduction techniques in structures with InAs quantum dots (QDs) for the 1.55 µ...

    N. D. Zakharov, P. Werner, U. Gösele, N. N. Ledentsov… in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    Electrical characterisation of UHV-bonded silicon interfaces

    Direct wafer bonding can be used to mechanically and electrically connect semiconductors. In our experiments two 100 mm diameter (100) Si wafers (n-do**: 1014 cm−3) are first cleaned by standard chemical cleani...

    A. Reznicek, S. Senz, O. Breitenstein, R. Scholz… in MRS Online Proceedings Library (2011)

  3. No Access

    Article

    Initial Growth Stages of Epitaxial BaTiO3 Films on Vicinal SrTiO3:Nb (001) Substrates

    The growth mechanism of epitaxial BaTiO3 films on vicinal Nb-doped SrTiO3 (SrTiO3:Nb) (001) substrate surfaces was studied in terms of surface morphology, crystalline orientation, microstructure, and film/substra...

    A. Visinoiu, M. Alexe, H. N. Lee, D. N. Zakharov… in MRS Online Proceedings Library (2011)

  4. No Access

    Article

    From the Mystery to the Understanding of the Self-Interstitials in Silicon

    Our present knowledge on self-interstitials in silicon and the rôle these defects play under widely different experimental conditions are surveyed. In particular, the following phenomena involving self-interst...

    W. Frank, A. Seeger, U. Gösele in MRS Online Proceedings Library (2011)

  5. No Access

    Article

    Modeling Growth Directional Features of Silicon Nanowires Obtained Using SiO

    Silicon nanowires (SiNW) grown using Si monoxide source materials are mainly oriented in the <112> direction, and some in the <110> direction. These directional features may be understood by postulating that g...

    T. Y. Tan, S. T. Lee, U. Gösele in MRS Online Proceedings Library (2011)

  6. No Access

    Article

    Large-area porous alumina photonic crystals via imprint method

    A perfect 2D porous alumina photonic crystal with 500 nm interpore distance was fabricated on an area of 4 cm2 via imprint methods and subsequent electrochemical anodization. A 4” imprint stamp consisting of a co...

    J. Choi, J. Schilling, K. Nielsch, R. Hillebrand… in MRS Online Proceedings Library (2011)

  7. No Access

    Article

    Dispersion relation of 3D photonic crystals based on macroporous silicon

    Extended 3D photonic crystals based on macroporous silicon are prepared by applying a periodic variation of the illumination during photoelectrochemical etching. If the lateral pore arrangement is 2D hexagonal...

    J. Schilling, F. Müller, R. B. Wehrspohn, U. Gösele… in MRS Online Proceedings Library (2011)

  8. No Access

    Chapter and Conference Paper

    Crystal Lattice Defects in MBE Grown Si Layers Heavily Doped with Er

    The main types of crystal structure defects in [Er]>2×1019 doped layers are: (i) spherical Er and (ii) ellipsoidal ErSi precipitates, as well as (iii) ErSi2 platelets on {111} planes. In the sample with [Er]=4x10

    N D Zakharov, P Werner, V I Vdovin… in Microscopy of Semiconducting Materials 2007 (2008)

  9. No Access

    Article

    Formation of Nanovoids and Nanocolumns in High Dose Hydrogen Implanted ZnO Bulk Crystals

    ZnO(0001) bulk crystals were implanted with 100 keV H2+ ions with various doses in the range of 5×1016 to 3×1017 cm-2. The ZnO crystals implanted up to a dose of 2.2×1017 cm-2 did not show any surface exfoliation...

    Rajendra Singh, R. Scholz, U. Gösele, S. H. Christiansen in MRS Online Proceedings Library (2007)

  10. No Access

    Chapter and Conference Paper

    TEM investigation of Si/Ge multilayer structure incorporated into MBE grown Si whiskers

    The TEM was used to monitor the composition of thin Ge layers incorporated into Si nanowhiskers grown by molecular beam epitaxy (MBE) on a <111> Si substrate. The method of chemical analysis was developed for ...

    N Zakharov, P Werner, G Gerth, L Schubert… in Microscopy of Semiconducting Materials (2005)

  11. No Access

    Article

    Dislocation structure in low-angle interfaces between bonded Si(001) wafers

    Dislocation structures of interfaces between bonded (001) Si wafers with co-existing low-angle twist and tilt misorientations were studied by transmission electron microscopy. At dominating twist, a square scr...

    T. Akatsu, R. Scholz, U. Gösele in Journal of Materials Science (2004)

  12. No Access

    Article

    Investigations of Mesoscopic Ferroelectric Structures Prepared by Imprint Lithography

    Arrays of mesoscopic ferroelectric PZT structures with lateral sizes from several micrometers down to below 300 nm were prepared applying nanoimprint lithography. The ferroelectric properties of the mesoscopic...

    C. Harnagea, M. Alexe, J. Schilling, R. B. Wehrspohn… in MRS Online Proceedings Library (2003)

  13. No Access

    Article

    Growth, Structure, and Properties of Uniformlya-Axis Oriented Ferroelectric Bi3.25La0.75Ti3O12 Thin Films on Si(100) Substrates

    Uniformlya-axis-oriented, epitaxially twinned Bi3.25La0.75Ti3O12 (BLT) thin films having the major spontaneous polarization entirely along the film normal were grown by pulsed laser deposition on yttria-stabilize...

    D. Hesse, H. N. Lee, N. D. Zakharov, U. Gösele in MRS Online Proceedings Library (2003)

  14. No Access

    Article

    Growth, Structure, and Properties of Uniformly a-Axis Oriented Ferroelectric Bi3.25La0.75Ti3O12 Thin Films on Si(100) Substrates

    Uniformly a-axis-oriented, epitaxially twinned Bi3.25La0.75Ti3O12 (BLT) thin films having the major spontaneous polarization entirely along the film normal were grown by pulsed laser deposition on yttria-stabiliz...

    D. Hesse, H. N. Lee, N. D. Zakharov, U. Gösele in MRS Online Proceedings Library (2003)

  15. No Access

    Article

    Magnetic Properties of 100 NM-Period Nickel Nanowire Arrays Obtained from Ordered Porous-Alumina Templates

    Ni nanowires were grown in highly-ordered anodic alumina templates using pulsed electrodeposition. This technique yields completely metal-filled alumina membranes. The magnetic behavior of 100 nm period arrays...

    K. Nielsch, R. B. Wehrspohn, S. F. Fischer, H. Kronmüller… in MRS Online Proceedings Library (2001)

  16. No Access

    Article

    Structure and Optical Properties of Si/InAs/Si Layers Grown by MBE on Si Substrate at Different Temperatures

    Epitaxial Si/InAs/Si heterostructure grown on (001) Si substrate by molecular beam epitaxy (MBE) and annealed at 800°C, and 880°C were investigated by High Resolution Transmission Electron Microscopy (HRTEM). ...

    N. D. Zakharov, P. Werner, U. Gösele, R. Heitz… in MRS Online Proceedings Library (2000)

  17. No Access

    Article

    InAs Nanostructures in a Silicon Matrix: Growth and Properties

    Under certain growth conditions InAs/Si heteroepitaxial growth proceeds via Stranski-Krastanow or Volmer-Weber growth modes depending on the growth parameters. Critical thickness at which three dimensional InA...

    G. E. Cirlin, Va. Egorov, V. N. Petrov, Ao. Golubok… in MRS Online Proceedings Library (1999)

  18. No Access

    Article

    Domain Imaging, Polarization Hysteresis, and Switching in Nano-Size Ferroelectric Structures

    A fundamental issue in the physics of ferroelectric memories and piezoelectric devices is to study how their properties scale with the size of the ferroelectric structure. In this work we present results conce...

    C. Harnagea, A. Pignolet, M. Alexe, D. Hesse, U. Gösele in MRS Online Proceedings Library (1999)

  19. No Access

    Article

    Wafer Bonding Involving Complex Oxides

    The present paper proposes a simple method which may be able to provide true single-crystal films of complex oxides on large substrates including semiconductors like silicon or gallium arsenide. The method des...

    M. Alexe, P. Kopperschmidt, U. Gösele, Qin-Yi Tong… in MRS Online Proceedings Library (1999)

  20. No Access

    Article

    All Epitaxial Babi4Ti4O15 - LaNiO3 Heterostructures

    Bismuth-based layer-structured ferroelectric oxides are gaining much attention for ferroelectric thin film applications due to their low fatigue. Epitaxial thin films of these layered ferroelectric oxides grow...

    K. M. Satyalakshmi, A. Pignolet, M. Alexe, N. D. Zakharov… in MRS Online Proceedings Library (1998)

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