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  1. No Access

    Chapter

    Amorphous-to-fcc Transition in GeSbTe Alloys

    S. Privitera, C. Bongiorno, E. Rimini, R. Zonca in Materials for Information Technology (2005)

  2. No Access

    Article

    Amorphous-to-polycrystal transition in GeSbTe thin films

    The amorphous-to-polycrystal transition has been studied in Ge2+xSb2Te5 (x = 0.0 and 0.5) films through X ray diffraction analysis and in situ electrical measurements. Phase separation has been observed in sample...

    S. Privitera, C. Bongiomo, E. Rimini, R. Zonca… in MRS Online Proceedings Library (2003)

  3. No Access

    Article

    Ultra Thin No/N20 Oxynitride Dielectric for Advanced Flash Memory Application: Single Wafer and Batch Technology

    In this paper a systematic investigation of nitrided oxides obtained by Rapid Thermal Oxidation/Nitridation (RTO/RTN) in AMAT Centura System is reported. Two different aspects were considered: first the compar...

    R. Zonca, B. Crivelli, M. L. Polignano, F. Cazzaniga… in MRS Online Proceedings Library (1999)

  4. No Access

    Article

    Nitridation by NO Or N2O of Si-SiO2 Interfaces

    X-ray photoelectron spectroscopy (XPS) and photocurrent measurements for the determination of surface recombination velocity provide complementary information on the structure of the Si-SiO2 interface, being sens...

    A. P. Caricato, F. Cazzaniga, G. F. Cerofolini… in MRS Online Proceedings Library (1999)

  5. No Access

    Article

    Characterization of nitrided silicon-silicon dioxide interfaces

    A newly-developed technique for the simultaneos characterization of the oxide-silicon interface properties and of bulk impurities was used for a systematic study of the nitridation process of thin oxides. This...

    M. L. Polignano, M. Alessandri, D. Brazzelli, B. Crivelli… in MRS Online Proceedings Library (1999)