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Ultra Thin No/N20 Oxynitride Dielectric for Advanced Flash Memory Application: Single Wafer and Batch Technology

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Abstract

In this paper a systematic investigation of nitrided oxides obtained by Rapid Thermal Oxidation/Nitridation (RTO/RTN) in AMAT Centura System is reported. Two different aspects were considered: first the comparison between single wafers and batch technology, second the different possible oxide architecture achievable with RTO/RTN system (i.e. RTO + RTN, RTN + RTO, RTN + RTO + RTN). Both morphological and patterned wafers were processed. Physical and chemical characterizations were carried out by means of SIMS, XPS, ELYMAT, AFM and Etching Rate studies. Morphological results were then correlated to electrical data obtained on MOS capacitors. The film obtained performing a NO RTN nitridation of the native oxide followed by a ISSG (In Situ Steam Generation) oxidation exhibited very promising electrical properties that made it an appealing candidate as gate dielectric in CMOS and Flash memories applications.

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Acknowledgments

The authors would like to express sincere thanks to G. Ghidini and E. Bellandi for the useful and critical discussions.

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Authors and Affiliations

  1. STMicroelectronics, 20041, Agrate, MI, Italy

    R. Zonca, B. Crivelli, M. L. Polignano, F. Cazzaniga & M. Alessandri

  2. INFM-MDM, 20041, Agrate, MI, Italy

    A. P. Caricato

  3. IRSTPovo di, Trento, Italy

    M. Bersani, M. Sbetti & L. Vanzetti

  4. Applied Materials, Santa Clara, CA, USA

    G. C. **ng, G. E. Miner, N. Astici, S. Kuppurao, D. Lopes & S. Nesso

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  1. R. Zonca
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  2. B. Crivelli
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  3. M. L. Polignano
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  4. F. Cazzaniga
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  5. M. Alessandri
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  6. A. P. Caricato
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  7. M. Bersani
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  8. M. Sbetti
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  9. L. Vanzetti
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  10. G. C. **ng
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  11. G. E. Miner
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  12. N. Astici
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  13. S. Kuppurao
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  14. D. Lopes
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  15. S. Nesso
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Corresponding author

Correspondence to R. Zonca.

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Zonca, R., Crivelli, B., Polignano, M.L. et al. Ultra Thin No/N20 Oxynitride Dielectric for Advanced Flash Memory Application: Single Wafer and Batch Technology. MRS Online Proceedings Library 592, 161–166 (1999). https://doi.org/10.1557/PROC-592-141

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  • DOI: https://doi.org/10.1557/PROC-592-141

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