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  1. No Access

    Article

    Physical-Chemical Evolution upon Thermal Treatments of Al2O3, HfO2 and Al/Hf Composite Materials Deposited by ALCVD™

    This paper presents a systematic investigation of thermal stability of high-k materials deposited on RCA cleaned wafers by ALCVDTM in an ASM PulsarTM 2000 reactor. Physical-chemical evolution of Al2O3, HfO2 and A...

    B. Crivelli, M. Alessandri, S. Alberici, F. Cazzaniga… in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    Crystallization Behavior of Hf-rich Aluminates and Influence on Film Dielectric Properties

    In this study, the investigation of crystallization behaviour of Hf-rich aluminate is presented. Different alloys were deposited by ALCVD™ with composition ranging between 16 and 47 Al2O3 mol%. Post-deposition an...

    M. Climent, B. Crivelli, G. Righini, S. Alberici… in MRS Online Proceedings Library (2003)

  3. No Access

    Article

    Physical-Chemical Evolution of Hf-aluminates upon Thermal Treatments

    This study presents an investigation on physical-chemical stability of (HfO2)x(Al2O3 )1-x alloys upon prolonged post-deposition annealings. Two different Hf-aluminates were deposited by ALCVDTM, containing 34% an...

    B. Crivelli, M. Alessandri, S. Alberici, D. Brazzelli… in MRS Online Proceedings Library (2003)

  4. No Access

    Article

    Ultra Thin No/N20 Oxynitride Dielectric for Advanced Flash Memory Application: Single Wafer and Batch Technology

    In this paper a systematic investigation of nitrided oxides obtained by Rapid Thermal Oxidation/Nitridation (RTO/RTN) in AMAT Centura System is reported. Two different aspects were considered: first the compar...

    R. Zonca, B. Crivelli, M. L. Polignano, F. Cazzaniga… in MRS Online Proceedings Library (1999)

  5. No Access

    Article

    Nitridation by NO Or N2O of Si-SiO2 Interfaces

    X-ray photoelectron spectroscopy (XPS) and photocurrent measurements for the determination of surface recombination velocity provide complementary information on the structure of the Si-SiO2 interface, being sens...

    A. P. Caricato, F. Cazzaniga, G. F. Cerofolini… in MRS Online Proceedings Library (1999)

  6. No Access

    Article

    Characterization of nitrided silicon-silicon dioxide interfaces

    A newly-developed technique for the simultaneos characterization of the oxide-silicon interface properties and of bulk impurities was used for a systematic study of the nitridation process of thin oxides. This...

    M. L. Polignano, M. Alessandri, D. Brazzelli, B. Crivelli… in MRS Online Proceedings Library (1999)