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  1. No Access

    Article

    Physical-Chemical Evolution upon Thermal Treatments of Al2O3, HfO2 and Al/Hf Composite Materials Deposited by ALCVD™

    This paper presents a systematic investigation of thermal stability of high-k materials deposited on RCA cleaned wafers by ALCVDTM in an ASM PulsarTM 2000 reactor. Physical-chemical evolution of Al2O3, HfO2 and A...

    B. Crivelli, M. Alessandri, S. Alberici, F. Cazzaniga… in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    The evolution of the ion implantation damage in device processing

    In this article the phenomenology related to the mechanisms of defect generation in Shallow Trench Isolation (STI) processes is discussed, and the role of the structure pattern is investigated. Defect formatio...

    M. L. Polignano, I. Mica, V. Bontempo… in Journal of Materials Science: Materials in… (2008)

  3. No Access

    Chapter and Conference Paper

    TEM sample preparation on photoresist

    In the last years the coming of the 193 nm lithography requested to the characterization technique a continuous improvement. Scanning electron microscopy (SEM), with Atomic force microscopy (AFM), remained the...

    F. Cazzaniga, E. Mondonico, E. Ricci… in EMC 2008 14th European Microscopy Congress… (2008)

  4. No Access

    Article

    Effects of Ion Metal Plasma (IMP) Titanium Deposition on Ti Silicide Formation

    Titanium disilicide obtained by direct interaction between Si and a deposited Ti layer is a choice for low- resistance gate interconnections and source and drain areas. The properties of the TiSi2 film can be inf...

    A. Sabbadini, F. Cazzaniga, M. Brambilla, C. Bresolin… in MRS Online Proceedings Library (1999)

  5. No Access

    Article

    Ultra Thin No/N20 Oxynitride Dielectric for Advanced Flash Memory Application: Single Wafer and Batch Technology

    In this paper a systematic investigation of nitrided oxides obtained by Rapid Thermal Oxidation/Nitridation (RTO/RTN) in AMAT Centura System is reported. Two different aspects were considered: first the compar...

    R. Zonca, B. Crivelli, M. L. Polignano, F. Cazzaniga… in MRS Online Proceedings Library (1999)

  6. No Access

    Article

    Nitridation by NO Or N2O of Si-SiO2 Interfaces

    X-ray photoelectron spectroscopy (XPS) and photocurrent measurements for the determination of surface recombination velocity provide complementary information on the structure of the Si-SiO2 interface, being sens...

    A. P. Caricato, F. Cazzaniga, G. F. Cerofolini… in MRS Online Proceedings Library (1999)

  7. No Access

    Article

    Novel Electromigration Failure Mechanism for Aluminium-Based Metallization on Titanium Substrate

    In this paper a phenomenological characterisation of an anomalous grain growth, observed after classical electromigration lifetests, on Al-l%Si-0.5%Cu multigrain stripes, deposited at high temperature (460°C) ...

    G. Girardi, C. Caprile, F. Cazzaniga, L. Riva in MRS Online Proceedings Library (1998)

  8. No Access

    Article

    Evaluating the Denuded Zone Depth by Measurements of the Recombination Activity of Bulk Defects

    A method for measuring denuded zone depth from lifetime measurements is proposed and compared to observations by microscopy techniques and to Electron Beam Induced Current (EBIC) analyses. The surface photovol...

    M. L. Polignano, M. Brambilla, F. Cazzaniga, G. Pavia… in MRS Online Proceedings Library (1998)