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  1. No Access

    Article

    Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y

    The crystalline and electronic structures, energy, kinetic, and magnetic characteristics of n-HfNiSn semiconductor heavily doped with Y acceptor impurity are studied in the ranges: T = 80–400 K, N ...

    V. A. Romaka, P. Rogl, V. V. Romaka, D. Kaczorowski, V. Ya. Krayovskyy… in Semiconductors (2017)

  2. No Access

    Article

    Features of conductivity mechanisms in heavily doped compensated V1–x Ti x FeSb Semiconductor

    The crystal and electronic structure and also the energy and kinetic properties of n-VFeSb semiconductor heavily doped with the Ti acceptor impurity are investigated in the temperature and Ti concentration ranges...

    V. A. Romaka, P. Rogl, V. V. Romaka, D. Kaczorowski, Yu. V. Stadnyk… in Semiconductors (2016)

  3. No Access

    Article

    Structural defect generation and band-structure features in the HfNi1 − x Co x Sn semiconductor

    The crystal and electronic structure and magnetic, energy, and kinetic properties of the n-HfNiSn semiconductor heavily doped with the Co acceptor impurity (HfNi1 − x Co ...

    V. A. Romaka, P. Rogl, V. V. Romaka, Yu. V. Stadnyk, V. Ya. Krayovskyy… in Semiconductors (2015)

  4. No Access

    Article

    Features of the band structure and conduction mechanisms of n-HfNiSn semiconductor heavily Lu-doped

    The crystal and electronic structures, energy, kinetic, and magnetic characteristics of n-HfNiSn semiconductor heavily doped with a Lu acceptor impurity in the ranges T = 80–400 K and N ...

    V. A. Romaka, P. Rogl, V. V. Romaka, D. Kaczorowski, Yu. V. Stadnyk… in Semiconductors (2015)

  5. No Access

    Article

    Features of the band structure and conduction mechanisms in the n-HfNiSn semiconductor heavily doped with Ru

    The crystal and electronic structure and energy and kinetic properties of the n-HfNiSn semiconductor heavily doped with a Ru acceptor impurity are investigated in the temperature and Ru concentration ranges T = 8...

    V. A. Romaka, P. Rogl, V. V. Romaka, Yu. V. Stadnyk, R. O. Korzh… in Semiconductors (2014)

  6. No Access

    Article

    Features of conduction mechanisms in n-HfNiSn semiconductor heavily doped with a Rh acceptor impurity

    The crystal structure and electron-density distribution, as well as the energy, kinetic, and magnetic characteristics of n-HfNiSn intermetallic semiconductor heavily doped with a Rh acceptor impurity in the tempe...

    V. A. Romaka, P. Rogl, Yu. V. Stadnyk, V. V. Romaka, E. K. Hlil… in Semiconductors (2013)

  7. No Access

    Article

    Effect of the accumulation of excess Ni atoms in the crystal structure of the intermetallic semiconductor n-ZrNiSn

    The crystal structure, electron density distribution, and energy, kinetic, and magnetic properties of the n-ZrNiSn intermetallic semiconductor heavily doped with a Ni impurity are investigated. The effect of the ...

    V. A. Romaka, P. Rogl, V. V. Romaka, Yu. V. Stadnyk, E. K. Hlil… in Semiconductors (2013)

  8. No Access

    Article

    Features of the conduction mechanisms of the n-HfNiSn semiconductor heavily doped with the Co acceptor impurity

    The crystalline structure, electron density distribution, energy and kinetic parameters of a HfNi1 − x Co x Sn semiconductor heavily doped with a Co acceptor impu...

    V. A. Romaka, P. Rogl, Yu. V. Stadnyk, V. V. Romaka, E. K. Hlil… in Semiconductors (2012)

  9. No Access

    Article

    Features of conductivity of the intermetallic semiconductor n-ZrNiSn heavily doped with a Bi donor impurity

    The crystal structure, distribution of the electron density of states, and the energy, kinetic, and magnetic properties of the intermetallic semiconductor n-ZrNiSn heavily doped with a Bi donor impurity have been...

    V. A. Romaka, P. Rogl, Yu. V. Stadnyk, E. K. Hlil, V. V. Romaka… in Semiconductors (2012)

  10. No Access

    Article

    Features of a priori heavy do** of the n-TiNiSn intermetallic semiconductor

    The crystal structure, the distribution of electron density, and the energy, kinetic, and magnetic properties of the n-TiNiSn intermetallic semiconductor are investigated. It is shown that a priori do** of n-Ti...

    V. A. Romaka, P. Rogl, V. V. Romaka, E. K. Hlil, Yu. V. Stadnyk… in Semiconductors (2011)

  11. No Access

    Article

    Features of the mechanisms of generation and “Healing” of structural defects in the heavily doped intermetallic semiconductor n-ZrNiSn

    The crystal structure, density of electron states, and charge-transport characteristics of an intermetallic semiconductor ZrNiSn heavily doped with acceptor impurity Y (N ...

    V. A. Romaka, E. K. Hlil, Ya. V. Skolozdra, P. Rogl, Yu. V. Stadnyk… in Semiconductors (2009)

  12. No Access

    Article

    The mechanism of generation of the donor- and acceptor-type defects in the n-TiNiSn semiconductor heavily doped with Co impurity

    Temperature dependences of resistivity, thermoelectric coefficient, and structural characteristics of the n-TiNiSn intermetallic semiconductor heavily doped with Co impurity (the Co concentration N ...

    V. A. Romaka, Yu. V. Stadnyk, D. Fruchart, T. I. Dominuk, L. P. Romaka… in Semiconductors (2009)

  13. No Access

    Article

    Mechanism of local amorphization of a heavily doped Ti1 − x V x CoSb intermetallic semiconductor

    Structural and electron transport characteristics of a TiCoSb intermetallic semiconductor heavily doped with the V donor impurity (dopant concentration ∼9.5 × 1019 − 1.9 × 1021 cm−3, temperatures 80–380 K) have b...

    V. A. Romaka, Yu. V. Stadnyk, L. G. Akselrud, V. V. Romaka, D. Fruchart… in Semiconductors (2008)

  14. No Access

    Article

    Magnetic Properties of (U1-xThx)3Al2M3 Compounds

    We have studied magnetic properties of (U1-xThx)3Al2M3 compounds, where M=Si, Ge and 0.00 ≤ x ≤ 0.25. Results of X-ray powder diffraction show that the substitution of U with Th leads to a nearly linear increase ...

    M. Mihalik, V. Kavečanský, K. Wochowski, R. Troć… in Czechoslovak Journal of Physics (2004)

  15. No Access

    Article

    Novel Superconductivity and Magnetism in CePt3Si

    CePt3Si exhibits antiferromagnetic order at T N ≈ 2.2 K and superconductivity (SC) at T c ≈ 0.75 K. Large values of H′ c2 ≈ −8.5 T/K and H c2(0) ≈ 5 T indicate Cooper pairs formed out of heavy quasiparticles. The...

    E. Bauer, G. Hilscher, H. Michor, M. Sieberer… in Czechoslovak Journal of Physics (2004)

  16. No Access

    Article

    Investigation of the magnetic phase transition in U 3 Al 2 Si 3

    A transition to magnetic ordered state has been investigated by AC-susceptibility measurements on a single crystal of U 3 Al 2 Si 3 ...

    M. Mihalik, S. Maťaš, M. Zentková, Z. Arnold… in Czechoslovak Journal of Physics (2002)

  17. No Access

    Article

    Physical properties of skutterudites YbxM4Sb12, M = Fe, Co, Rh, Ir

    A series of compounds YbxM4Sb12, were synthesised by reaction sintering. From Rietveld refinements isotypism was determined in all cases with the LaFe4P12-(skutterudite)-type, space group

    E. Bauer, A. Galatanu, H. Michor… in The European Physical Journal B - Condense… (2000)

  18. No Access

    Article

    Superconducting properties of La3Ni2B2N3−δ

    We present superconducting properties of the title compound withT c =11.7K studied by heat capacity measurements in external fields up to 11T and resistivity mea...

    H. Michor, G. Hilscher, E. Bauer, R. Hauser, L. Naber… in Czechoslovak Journal of Physics (1996)