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  1. No Access

    Article

    Structural and thermoelectric properties of Zr1 − x Er x NiSn solid solutions

    We have studied the electronic and crystal structures and temperature-dependent resistivity and thermopower of Zr1 − x Er x NiSn (x = 0–0.20) substitution...

    Yu. V. Stadnyk, A. M. Goryn’, V. V. Romaka, Yu. K. Gorelenko… in Inorganic Materials (2011)

  2. No Access

    Article

    Thermoelectric power factor of Ti1 − x V x NiSn alloys

    Ti1 − x V x NiSn (x = 0–0.10) substitutional solid solutions have been prepared by do** the intermetallic semiconductor n-TiNiSn (half-Heusler phase) wi...

    Yu. V. Stadnyk, A. M. Goryn’, Yu. K. Gorelenko, L. P. Romaka… in Inorganic Materials (2010)

  3. No Access

    Article

    Features of the mechanisms of generation and “Healing” of structural defects in the heavily doped intermetallic semiconductor n-ZrNiSn

    The crystal structure, density of electron states, and charge-transport characteristics of an intermetallic semiconductor ZrNiSn heavily doped with acceptor impurity Y (N ...

    V. A. Romaka, E. K. Hlil, Ya. V. Skolozdra, P. Rogl, Yu. V. Stadnyk… in Semiconductors (2009)

  4. No Access

    Article

    The mechanism of generation of the donor- and acceptor-type defects in the n-TiNiSn semiconductor heavily doped with Co impurity

    Temperature dependences of resistivity, thermoelectric coefficient, and structural characteristics of the n-TiNiSn intermetallic semiconductor heavily doped with Co impurity (the Co concentration N ...

    V. A. Romaka, Yu. V. Stadnyk, D. Fruchart, T. I. Dominuk, L. P. Romaka… in Semiconductors (2009)

  5. No Access

    Article

    Features of structural, electron-transport, and magnetic properties of heavily doped n-ZrNiSn semiconductor: Fe acceptor impurity

    Structural, energy, electron-transport, and magnetic characteristics of the n-ZrNiSn intermetallic semiconductor heavily doped with Fe (the concentration N Fe ≈ 9.7 × 1019−3.8 × 1021 cm−3)...

    V. A. Romaka, Yu. V. Stadnyk, D. Fruchart, L. P. Romaka, A. M. Goryn… in Semiconductors (2009)

  6. No Access

    Article

    Conditions for attaining the maximum values of thermoelectric power in intermetallic semiconductors of the MgAgAs structural type

    A condition for attaining the maximum values of thermoelectric power Z* in intermetallic semiconductors of the MgAgAs structural type consists in heavy do** of these semiconductors with donor and/or acceptor im...

    V. A. Romaka, D. Fruchart, Yu. V. Stadnyk, J. Tobola, Yu. K. Gorelenko… in Semiconductors (2006)

  7. No Access

    Article

    Role of the impurity band during the insulator-metal transition as the composition of highly doped and compensated TiCo1–x NixSb semiconductor alloy is varied. Donor impurities

    The role of the impurity donor band in the conductivity of the heavily doped and compensated intermetallic TiCoSb semiconductor is determined. The electronic structure of the TiCo1–x NixSb...

    V. A. Romaka, M. G. Shelyapina, Yu. V. Stadnyk, D. Fruchart, L. P. Romaka… in Semiconductors (2006)

  8. No Access

    Article

    Special features of conductivity mechanisms in heavily doped n-ZrNiSn intermetallic semiconductors

    The effect of high concentrations of acceptor dopants (N A = 1020 cm−3) on the electronic structure, Fermi level, electrical conductivity, Seebeck coefficient, and magnetic susceptibility of n-ZrNiSn intermetalli...

    V. A. Romaka, M. G. Shelyapina, Yu. K. Gorelenko, D. Fruchart… in Semiconductors (2006)

  9. No Access

    Article

    Specific features of the metal-insulator conductivity transition in narrow-gap semiconductors of the MgAgAs structure type

    The role of the impurity acceptor band in the conductivity of the doped and compensated ZrNiSn semiconductor is assessed. A reconstruction model of the impurity band as a result of do** the semiconductor wit...

    V. A. Romaka, Yu. V. Stadnyk, M. G. Shelyapina, D. Fruchart… in Semiconductors (2006)