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  1. No Access

    Article

    The mechanism of generation of the donor- and acceptor-type defects in the n-TiNiSn semiconductor heavily doped with Co impurity

    Temperature dependences of resistivity, thermoelectric coefficient, and structural characteristics of the n-TiNiSn intermetallic semiconductor heavily doped with Co impurity (the Co concentration N ...

    V. A. Romaka, Yu. V. Stadnyk, D. Fruchart, T. I. Dominuk, L. P. Romaka… in Semiconductors (2009)

  2. No Access

    Article

    Features of structural, electron-transport, and magnetic properties of heavily doped n-ZrNiSn semiconductor: Fe acceptor impurity

    Structural, energy, electron-transport, and magnetic characteristics of the n-ZrNiSn intermetallic semiconductor heavily doped with Fe (the concentration N Fe ≈ 9.7 × 1019−3.8 × 1021 cm−3)...

    V. A. Romaka, Yu. V. Stadnyk, D. Fruchart, L. P. Romaka, A. M. Goryn… in Semiconductors (2009)