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Features of the mechanisms of generation and “Healing” of structural defects in the heavily doped intermetallic semiconductor n-ZrNiSn

  • Atomic Structure and Nonelectronic Properties of Semiconductors
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Abstract

The crystal structure, density of electron states, and charge-transport characteristics of an intermetallic semiconductor ZrNiSn heavily doped with acceptor impurity Y (N YA ≈ 3.8 × 1020−4.8 × 1021 cm−3) have been studied in the temperature range T = 80–380 K. Relation between the impurity concentration and the amplitude of a large-scale fluctuation and also the degree of occupation of the potential well of small-scale fluctuation by charge carriers (fine structure) is established. The results are discussed in the context of the Shklovskii-Efros model for a heavily doped and compensated semiconductor.

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Authors and Affiliations

  1. Ya. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics, National Academy of Sciences of Ukraine, 79060, Lviv, Ukraine

    V. A. Romaka

  2. National University “Lvivska Politechnika”, 79013, Lviv, Ukraine

    V. A. Romaka & Ya. V. Skolozdra

  3. Institut Neel, CNRS, BP 166, 38042, Grenoble, France

    E. K. Hlil

  4. Institut für Physikalische Chemie, Universität Wien, A-1090, Wien, Austria

    P. Rogl

  5. Ivan Franko Lviv National University, 79005, Lviv, Ukraine

    Yu. V. Stadnyk, L. P. Romaka & A. M. Goryn

Authors
  1. V. A. Romaka
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  2. E. K. Hlil
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  3. Ya. V. Skolozdra
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  4. P. Rogl
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  5. Yu. V. Stadnyk
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  6. L. P. Romaka
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  7. A. M. Goryn
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Corresponding author

Correspondence to V. A. Romaka.

Additional information

Original Russian Text © V.A. Romaka, E.K. Hlil, Ya.V. Skolozdra, P. Rogl, Yu.V. Stadnyk, L.P. Romaka, A.M. Goryn, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 9, pp. 1157–1164.

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Romaka, V.A., Hlil, E.K., Skolozdra, Y.V. et al. Features of the mechanisms of generation and “Healing” of structural defects in the heavily doped intermetallic semiconductor n-ZrNiSn. Semiconductors 43, 1115–1123 (2009). https://doi.org/10.1134/S1063782609090024

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  • DOI: https://doi.org/10.1134/S1063782609090024

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