Abstract
Temperature dependences of resistivity, thermoelectric coefficient, and structural characteristics of the n-TiNiSn intermetallic semiconductor heavily doped with Co impurity (the Co concentration N Co ≈ 9.5 × 1019−1.9 × 1021 cm−3) have been studied in the temperature range 80–380 K; the distribution of the electron density of states is also calculated. It is shown that, in TiNi1 − xCo x Sn with x < 0.03, the impurity atoms occupy crystallographic sites of atoms Ti and Ni simultaneously and in various proportions and generate the donor and acceptor defects, respectively. It is established that there is a relation between the impurity concentration, the amplitude of a large-scale fluctuation, and also the degree of filling of the potential well of a small-scale fluctuation (fine structure). The results are discussed in the context of the Shklovskiĭ-Éfros model of a heavily doped and compensated semiconductor.
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Original Russian Text © V.A. Romaka, Yu.V. Stadnyk, D. Fruchart, T.I. Dominuk, L.P. Romaka, P. Rogl, A.M. Goryn, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 9, pp. 1165–1171.
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Romaka, V.A., Stadnyk, Y.V., Fruchart, D. et al. The mechanism of generation of the donor- and acceptor-type defects in the n-TiNiSn semiconductor heavily doped with Co impurity. Semiconductors 43, 1124–1130 (2009). https://doi.org/10.1134/S1063782609090036
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DOI: https://doi.org/10.1134/S1063782609090036