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Article
Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y
The crystalline and electronic structures, energy, kinetic, and magnetic characteristics of n-HfNiSn semiconductor heavily doped with Y acceptor impurity are studied in the ranges: T = 80–400 K, N ...
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Article
Features of conductivity mechanisms in heavily doped compensated V1–x Ti x FeSb Semiconductor
The crystal and electronic structure and also the energy and kinetic properties of n-VFeSb semiconductor heavily doped with the Ti acceptor impurity are investigated in the temperature and Ti concentration ranges...
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Article
Open AccessChemical and Thermoelectric Properties of Hot Pressed and Spark Plasma Sintered Type-I Clathrate Ba8Cu4.8Si41.2
Nanostructuring has been considered as an effective way to reduce the thermal conductivity and enhance the thermoelectric performance in different material systems. Here, we present the chemical and thermoelec...
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Article
High Temperature FeB-type Phases in the Systems Ta-{Ti,Zr,Hf}-B
Novel FeB-type phases have been evaluated in the systems Ta-{Ti,Zr,Hf}-B either from as cast or arc treated samples by x-ray powder and single crystal diffraction as well as electron probe microanalysis. In ea...
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Article
Structural defect generation and band-structure features in the HfNi1 − x Co x Sn semiconductor
The crystal and electronic structure and magnetic, energy, and kinetic properties of the n-HfNiSn semiconductor heavily doped with the Co acceptor impurity (HfNi1 − x Co ...
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Article
Features of the band structure and conduction mechanisms of n-HfNiSn semiconductor heavily Lu-doped
The crystal and electronic structures, energy, kinetic, and magnetic characteristics of n-HfNiSn semiconductor heavily doped with a Lu acceptor impurity in the ranges T = 80–400 K and N ...
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Article
Features of the band structure and conduction mechanisms in the n-HfNiSn semiconductor heavily doped with Ru
The crystal and electronic structure and energy and kinetic properties of the n-HfNiSn semiconductor heavily doped with a Ru acceptor impurity are investigated in the temperature and Ru concentration ranges T = 8...
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Article
Crystal Structure of W1−x B3 and Phase Equilibria in the Boron-Rich Part of the Systems Mo-Rh-B and W-{Ru,Os,Rh,Ir,Ni,Pd,Pt}-B
The crystal structure of W1−x B3 has been reinvestigated by x-ray single crystal diffraction and revealed isotypism with the Mo1−x B3 structure type (space group P63/mmc; a = 0.520...
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Article
The Systems Tantalum (Niobium)-Cobalt-Boron
Constitution of the ternary systems Nb-Co-B and Ta-Co-B was studied, employing optical and electron microscopy, x-ray powder, single crystal diffraction, electron probe microanalysis, DTA and Pirani melting po...
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Chapter
Mechanical Properties of Intermetallic Clathrates
The present work provides a comprehensive compilation and discussion covering hardness, experimentally determined elastic properties, thermal expansion, and Debye and Einstein temperatures for intermetallic cl...
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Article
In y Co4Sb12 Skutterudite: Phase Equilibria and Crystal Structure
Phase relations were investigated for the In-Co-Sb system in the temperature range from 375°C to 800°C using as-cast and annealed alloys. Phase equilibria in the CoSb-InSb-(Sb) composition triangle are present...
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Article
Features of conduction mechanisms in n-HfNiSn semiconductor heavily doped with a Rh acceptor impurity
The crystal structure and electron-density distribution, as well as the energy, kinetic, and magnetic characteristics of n-HfNiSn intermetallic semiconductor heavily doped with a Rh acceptor impurity in the tempe...
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Article
High-Pressure Torsion to Improve Thermoelectric Efficiency of Clathrates?
High-pressure torsion (HPT), as a technique to produce severe plastic deformation, has been proven effective to improve the thermoelectric performance of skutterudites. In this report, we present microstructur...
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Article
Effect of the accumulation of excess Ni atoms in the crystal structure of the intermetallic semiconductor n-ZrNiSn
The crystal structure, electron density distribution, and energy, kinetic, and magnetic properties of the n-ZrNiSn intermetallic semiconductor heavily doped with a Ni impurity are investigated. The effect of the ...
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Chapter and Conference Paper
From Superconductivity Towards Thermoelectricity: Ge-Based Skutterudites
We report on a substitution of Ge by Sb in \(\mathrm {LaPt_4Ge_{12}}\) , which significantly changes ground state properties, from a s...
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Chapter and Conference Paper
Changes of Thermoelectric Properties and Hardness After HPT Processing of Micro- and Nanostructured Skutterudites
In this paper the influence of the starting material on the physical properties after severe plastic deformation (SPD) will be discussed. A bulk p-type skutterudite DD0.44Fe2.1Co1.9Sb12(DD stands for didymium whi...
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Article
Influence of Sn on the structural and thermoelectric properties of the type-I clathrates Ba8Cu5Si6Ge35-xSnx (0 ≤ x ≤ 0.6)
On the search for cost-competitive thermoelectric clathrates we have investigated the influence of Sn substitutions for Ge on the structural and thermoelectric properties of the type-I clathrate Ba8Cu5Si6Ge35. Th...
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Article
Features of the conduction mechanisms of the n-HfNiSn semiconductor heavily doped with the Co acceptor impurity
The crystalline structure, electron density distribution, energy and kinetic parameters of a HfNi1 − x Co x Sn semiconductor heavily doped with a Co acceptor impu...
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Article
Features of conductivity of the intermetallic semiconductor n-ZrNiSn heavily doped with a Bi donor impurity
The crystal structure, distribution of the electron density of states, and the energy, kinetic, and magnetic properties of the intermetallic semiconductor n-ZrNiSn heavily doped with a Bi donor impurity have been...
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Article
Structural and Thermoelectric Properties of Ba8Cu x Si23-x Ge23 (4.5 ≤ x ≤ 7)
Intermetallic clathrates are promising materials for thermoelectric applications at elevated temperatures. In the search for cost-competitive representatives, we investigate the thermoelectric properties of qu...