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Article
Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y
The crystalline and electronic structures, energy, kinetic, and magnetic characteristics of n-HfNiSn semiconductor heavily doped with Y acceptor impurity are studied in the ranges: T = 80–400 K, N ...
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Article
Features of conductivity mechanisms in heavily doped compensated V1–x Ti x FeSb Semiconductor
The crystal and electronic structure and also the energy and kinetic properties of n-VFeSb semiconductor heavily doped with the Ti acceptor impurity are investigated in the temperature and Ti concentration ranges...
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Article
High Temperature FeB-type Phases in the Systems Ta-{Ti,Zr,Hf}-B
Novel FeB-type phases have been evaluated in the systems Ta-{Ti,Zr,Hf}-B either from as cast or arc treated samples by x-ray powder and single crystal diffraction as well as electron probe microanalysis. In ea...
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Article
Structural defect generation and band-structure features in the HfNi1 − x Co x Sn semiconductor
The crystal and electronic structure and magnetic, energy, and kinetic properties of the n-HfNiSn semiconductor heavily doped with the Co acceptor impurity (HfNi1 − x Co ...
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Article
Features of the band structure and conduction mechanisms of n-HfNiSn semiconductor heavily Lu-doped
The crystal and electronic structures, energy, kinetic, and magnetic characteristics of n-HfNiSn semiconductor heavily doped with a Lu acceptor impurity in the ranges T = 80–400 K and N ...
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Article
Features of the band structure and conduction mechanisms in the n-HfNiSn semiconductor heavily doped with Ru
The crystal and electronic structure and energy and kinetic properties of the n-HfNiSn semiconductor heavily doped with a Ru acceptor impurity are investigated in the temperature and Ru concentration ranges T = 8...
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Article
Crystal Structure of W1−x B3 and Phase Equilibria in the Boron-Rich Part of the Systems Mo-Rh-B and W-{Ru,Os,Rh,Ir,Ni,Pd,Pt}-B
The crystal structure of W1−x B3 has been reinvestigated by x-ray single crystal diffraction and revealed isotypism with the Mo1−x B3 structure type (space group P63/mmc; a = 0.520...
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Article
The Systems Tantalum (Niobium)-Cobalt-Boron
Constitution of the ternary systems Nb-Co-B and Ta-Co-B was studied, employing optical and electron microscopy, x-ray powder, single crystal diffraction, electron probe microanalysis, DTA and Pirani melting po...
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Article
Features of conduction mechanisms in n-HfNiSn semiconductor heavily doped with a Rh acceptor impurity
The crystal structure and electron-density distribution, as well as the energy, kinetic, and magnetic characteristics of n-HfNiSn intermetallic semiconductor heavily doped with a Rh acceptor impurity in the tempe...
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Article
Effect of the accumulation of excess Ni atoms in the crystal structure of the intermetallic semiconductor n-ZrNiSn
The crystal structure, electron density distribution, and energy, kinetic, and magnetic properties of the n-ZrNiSn intermetallic semiconductor heavily doped with a Ni impurity are investigated. The effect of the ...
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Chapter and Conference Paper
From Superconductivity Towards Thermoelectricity: Ge-Based Skutterudites
We report on a substitution of Ge by Sb in \(\mathrm {LaPt_4Ge_{12}}\) , which significantly changes ground state properties, from a s...
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Chapter and Conference Paper
Changes of Thermoelectric Properties and Hardness After HPT Processing of Micro- and Nanostructured Skutterudites
In this paper the influence of the starting material on the physical properties after severe plastic deformation (SPD) will be discussed. A bulk p-type skutterudite DD0.44Fe2.1Co1.9Sb12(DD stands for didymium whi...
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Article
Features of the conduction mechanisms of the n-HfNiSn semiconductor heavily doped with the Co acceptor impurity
The crystalline structure, electron density distribution, energy and kinetic parameters of a HfNi1 − x Co x Sn semiconductor heavily doped with a Co acceptor impu...
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Article
Features of conductivity of the intermetallic semiconductor n-ZrNiSn heavily doped with a Bi donor impurity
The crystal structure, distribution of the electron density of states, and the energy, kinetic, and magnetic properties of the intermetallic semiconductor n-ZrNiSn heavily doped with a Bi donor impurity have been...
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Chapter
Non-centrosymmetric Superconductors: Strong vs. Weak Electronic Correlations
Superconductivity in materials without inversion symmetry displays intriguing properties due to a strong modification of their band structures caused by antisymmetric spin-orbit coupling. This is most dramatic...
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Article
Features of a priori heavy do** of the n-TiNiSn intermetallic semiconductor
The crystal structure, the distribution of electron density, and the energy, kinetic, and magnetic properties of the n-TiNiSn intermetallic semiconductor are investigated. It is shown that a priori do** of n-Ti...
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Article
Phase Equilibria, Crystal Chemistry and Physical Properties of Au-Ba-Ge Clathrates
In the Au-Ba-Ge system the clathrate type I solid solution, Ba8Au x Ge46−x−y □ y , extends at 800 °C from binary Ba8Ge43
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Article
Features of the mechanisms of generation and “Healing” of structural defects in the heavily doped intermetallic semiconductor n-ZrNiSn
The crystal structure, density of electron states, and charge-transport characteristics of an intermetallic semiconductor ZrNiSn heavily doped with acceptor impurity Y (N ...
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Article
The mechanism of generation of the donor- and acceptor-type defects in the n-TiNiSn semiconductor heavily doped with Co impurity
Temperature dependences of resistivity, thermoelectric coefficient, and structural characteristics of the n-TiNiSn intermetallic semiconductor heavily doped with Co impurity (the Co concentration N ...
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Chapter and Conference Paper
Skutterudites, a thermoelectric material investigated by high field Mössbauer spectroscopy
The partly filled skutterudites A x Fe4Sb12 (A = La, Pr, Nd, Eu, Yb, and the monovalent homologue Tl) were investigated at 4.2 K by 57Fe Mössbauer spectroscopy in external fields up to 1...
