-
Article
Investigation of the structure of (p)3C-SiC-(n)6H-SiC heterojunctions
The structure of (p)3C-SiC-(n)6H-SiC epitaxial structures obtained by sublimation epitaxy in vacuum on 6H-SiC substrates was studied by methods of X-ray topography, X-ray diffraction, and transmission electron mi...
-
Article
GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique
In this paper, we describe the seeded growth of ∼20 mm diameter 15 mm long GaN ingots from the melt-solution. This is the first successful attempt to conduct growth of GaN boule-crystals. GaN ingots were grown...
-
Article
Electrical characteristics and structural properties of ohmic contacts to p-type 4H-SiC epitaxial layers
Epitaxial films grown by low-temperature liquid phase epitaxy on p-type 4H-SiC were used as strongly doped subcontact layers for making low-resistance contacts to the p-type material. The layers had a bulk resist...
-
Article
GaInAsSb/GaSb heterostructures grown in the spinodal decay region by liquid-phase epitaxy from Sb-enriched solution-melts
Nearly isoperiodic solitary Ga1−x InxAsySb1−y /GaSb heterostructures, in which the composition of the solid solution should be found inside the region of spinodal decay (x⩽0.4), were grown by liquid-phase epitaxy...
-
Article
Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy
We investigated silicon carbide (SiC) epitaxial layers grown by liquid phase epitaxy (LPE). The layers were grown on 6H-SiC and 4H-SiC well-oriented (0001) 35 mm diameter commercial wafers as well as on 6H-SiC...
-
Article
GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers
6H-SiC/GaN pn-heterostructures were grown by subsequent epitaxial growth of p-SiC by low temperature liquid phase epitaxy (LTLPE) and n-GaN by hydride vapor phase epitaxy (HVPE). For the first time, p-type epi...
-
Article
AIN/GaN and AIGaN/GaN Heterostructures Grown by HVPE on SiC Substrates
GaN, AIN and AIGaN layers were grown by hydride vapor phase epitaxy. 6H-SiC wafers were used as substrates. Properties of AIN/GaN and AIGaN/GaN structures were investigated. AIGaN growth rate was about 1 μm/mi...
-
Article
Physical properties of bulk single-crystal wafers of gallium nitride
A study has been performed of the crystalline structure and optical characteristics of single crystals of gallium nitride (GaN). The crystals were grown from a gallium-based flux. X-ray structural analysis sho...
-
Article
GaN Layers Grown by HVPE on P-type 6H-SiC Substrates
Gallium nitride films were successfully grown by HVPE technique on p-type 6H-SiC substrate. The layers exhibit high crystal quality as was determined by X-ray diffraction. Photoluminescence (PL) of these films...
-
Article
Fabrication of GaN mesa structures
We report on nickel based technology for the fabrication of GaN mesa structures. Ti/Ni ohmic contacts for n-doped GaN with contact resistivity Rc ~2×10-5 Ω×cm2 and Ni ohmic contacts for p-doped GaN with Rc ~ 4×10
-
Chapter and Conference Paper
Liquid Phase Epitaxy of SiC-AlN Solid Solutions
In this paper we described (SiC)1−x(AlN)x layers and pn structures grown by container free liquid phase epitaxy. Auger measurements have indicated that the concentration of the AlN component in the epitaxial laye...
-
Chapter and Conference Paper
Growth of Cubic Silicon Carbide on Silicon Using the C2HCl3-SiH4-H2 System
Cubic silicon carbide is a widegap semiconductor whose chemical and physical properties make it applicable for fabrication of electronic devices operating in extreme environments: high temperature, radiation e...
-
Chapter and Conference Paper
Structural Defects in Epitaxial Layers SiC-3C/Si Grown by CVD
The present, study reports research results of a dislocation structure of epitaxial layers SiC-3C/Si, grown by CVD without a buffer layer and by “buffer” technology. X-ray differential diffractometry and TEM w...
