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Article
Gettering Effect in Cr/4H–SiC UV Photodetectors under Ptoton Irradiation with E = 15 MeV
The mechanism of structure transformation in Cr/4H–SiC UV photo detectors, which is responsi-ble for the cyclic gettering of radiation defects, under repeated proton irradiation, is proposed in this work.
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Article
Effect of Temperature on the Characteristics of 4H-SiC UV Photodetectors
The influence exerted by the carrier concentration in the range (1–50) × 1014 cm–3 in n-4H-SiC chemical-vapor deposited (CVD) epitaxial layers on the spectral characteristics of UV photodetectors with Cr Schottky...
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Article
Proton Irradiation of 4H-SiC Photodetectors with Schottky Barriers
For the first time, comprehensive comparative investigations of ultraviolet photodetectors with Cr Schottky barriers formed on 4H-SiC epitaxial layers are carried out by the X-ray and optical methods before and a...