Abstract
The results of the effect of irradiation with Ar ions on the structural, electrophysical, and optical characteristics of ultraviolet Cr/4H-SiC photodetectors in the spectral range 200 to 400 nm are presented. After a single irradiation with Ar ions with an energy of 53 MeV with a fluence of 1 × 1010 cm–2 the values of the quantum efficiency of photodetectors practically remain at the level of the initial samples due to the “gettering effect” of simple radiation defects by cluster formations. This effect contributes to a decrease in the number of simple radiation defects of the vacancy type, an increase in the lifetime of current carriers, and, as a result, unchanged values of the photoconductivity of Cr/4H-SiC photodetectors. After the repeated irradiation of photodetectors with Ar ions with a total fluence of 2 × 1010 cm–2 the decay of clusters and the formation of a significant number of simple defect centers are observed, which lead to a decrease in the lifetime of the current carriers and photoconductivity of Cr/4H-SiC detectors.
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Kalinina, E.V., Kudoyarov, M.F., Nikitina, I.P. et al. Irradiation with Argon Ions of Cr/4H-SiC Photodetectors. Semiconductors 56, 184–188 (2022). https://doi.org/10.1134/S1063782622020087
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DOI: https://doi.org/10.1134/S1063782622020087