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Article
Ge(Li) spectrometer with thermoelectric cooler
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Article
Surface mobility and distribution of electrons in the accumulation layer of Ga2Se3/GaAs heterostructures
The dependence of the electron drift mobility in the undepleted conduction channels of Ga2Se3/GaAs heterostructures on the surface charge density is measured. The presence of charge coupling in the accumulation l...
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Article
Self-organizing nanoheterostructures in InGaAsP solid solutions
This paper discusses the photoluminescence and x-ray microstructural properties of epitaxial layers of solid solutions of InGaAsP isoperiodic with InP (100) and GaAs (100) substrates, obtained in the region of...
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Article
Multiwell laser heterostructures fabricated by liquid-phase epitaxy
A methodology has been developed for growing InGaAsP/InP multiwell laser heterostructures by liquid-phase epitaxy. Depth profiling using a secondary ion mass spectrometer was used to investigate the distributi...
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Article
Reconstruction and electron states of a Ga2Se3-GaAs heterointerface
It is established by electron microscopy and electron diffraction analysis that the formation of Ga2Se3(110) layers on GaAs(100) and (111) surfaces during heat treatment of the latter in selenium vapor is accompa...
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Article
Electron states in the surface region of gallium arsenide treated in selenium and arsenic vapor
The parameters of charge localization centers in the skin layer of gallium arsenide treated in selenium-arsenic vapor are investigated by deep-layer transient spectroscopy. It is established that the addition ...
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Article
Position of the Fermi level on an indium arsenide surface treated in sulfur vapor
The characteristic features of the formation kinetics of In2S3 layers on indium arsenide substrates by heterovalent substitution are studied. The activation energies of two steps in this process are separated and...
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Article
MOCVD-grown broad area InGaAs/GaAs/InGaP laser diodes
A MOCVD technology for growth of InGaAs/GaAs/InGaP laser heterostructures on a modified Epiquip VP-50-RP installation was developed. Mesa stripe laser diodes with threshold current density J th=100–200 A/cm2, int...
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Article
On the possible mechanism of crystal growth from melt under zero gravity conditions
A possible mechanism of the growth of semiconductor single crystals from melt under zero gravity conditions is considered. The results of computer simulation performed by the molecular dynamics method for a th...
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Article
Structural and electrical characteristics of epitaxial InP layers on porous substrates and the parameters of related Au-Ti Schottky barriers
The structures comprising three epitaxial InP layers—buffer (n ++), active (n), and contact (n +)—were grown by liquid phase epitaxy on porous and compact (control) InP(100) substrates. High quality of the active...
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Article
Synchrotron investigations of an electron energy spectrum in III–V-based nanostructures
Using synchrotron radiation, the spectra of an X-ray absorption near-edge structure in a region of P-L 2, 3 edges of a band spectrum are obtained for the first time. The spectra give insight into the local densit...
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Article
Using axisymmetric potential in modeling crystal growth from melt
A model describing the growth of AIIIAV semiconductor compounds from a melt has been developed based on an axisymmetric potential of pair interaction between atoms in the growing crystal and in the melt. Numerica...
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Article
Vegard’s law and superstructural phases in AlxGa1−x As/GaAs(100) epitaxial heterostructures
The lattice constants of AlxGa1−x As epitaxial alloys with various AlAs (x) contents are determined for AlxGa1−x As/GaAs(100) heterostructures grown by MOC-hydride epitaxy using X-ray diffractometry and an X-ray...
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Article
Formation of nanostructures in a Ga2Se3/GaAs system
The topology of GaAs(100) and GaAs(111) surfaces before and after short treatments in Se vapor is studied by atomic-force microscopy. On the basis of this study, as well as ellipsometry and electron microscopy...
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Article
Infrared reflectance spectra and morphologic features of the surface of epitaxial AlxGa1−x As/GaAs(100) heterostructures with the ordered AlGaAs2 phase
The infrared reflectance spectra associated with lattice vibrations in the epitaxial AlxGa1−x As/GaAs(100) heterostructures with different Al content in the cation sublattice are studied. The structures are grown...
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Article
Diffusion-barrier contacts based on the TiN and Ti(Zr)Bx interstitial phases in the microwave diodes for the range of 75–350 GHz
A new technology for thermally stable ohmic contacts with diffusion barriers based on the amorphous TiN and Ti(Zr)Bx interstitial phases is used in the development of microwave diodes for the millimeter region (w...
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Article
Photovoltaic converters based on GaAs and AlGaAs epitaxial layers on GaAs substrates with developed surface area
MOCVD and LPE technologies of deposition of GaAs and AlGaAs layers onto (100) GaAs substrates with a developed surface area are developed. Porous GaAs layers and surface microprofiles of dendrite and quasi-gra...
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Article
Beryllium diffusion and influence on the luminescent and electrical properties of indium phosphide
The diffusion of beryllium in indium phosphide (InP) has been studied. The temperature dependence of the diffusion coefficient can be described by the formula D = 6.3 × 10−5exp(−1.4/kT) [cm2/s], which yields D = ...
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Article
Saturation of light-current characteristics of high-power laser diodes (λ = 1.0–1.8 μm) under pulse operation
Spectral and light-current characteristics of separate-confinement lasers that are based on InAl-GaAs/InP and InGaAsP/InP alloys and emit in the wavelength range of 1.5–1.8 μm are studied at high excitation le...
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Article
Double-band generation in quantum-well semiconductor laser at high injection levels
Spectral and emission-power characteristics of semiconductor lasers based on quantum-dimensional asymmetric heterostructures with separate confinement in a system of InGaAs/GaAs/AlGaAs alloys are studied in th...
