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  1. No Access

    Article

    Optimization of emitter cap growth conditions for InGaP/GaAs HBTs with high current gain by LP-MOCVD

    The effect of emitter cap growth conditions on the common-emitter current gain of InGaP/GaAs HBTs, grown by LP-MOCVD, has been studied. This work shows that the material quality of a carbon-doped base is highl...

    Q. Yang, D. Scott, T. Chung, G. E. Stillman in Journal of Electronic Materials (2000)

  2. No Access

    Article

    Domain structure and electrical properties of highly textured PbZrxTi1−xO3 thin films grown on LaNiO3-electrode-buffered Si by metalorganic chemical vapor deposition

    Thin films of highly (100) textured fine-grain (lateral grain size ≅0.1 to 0.15 μm) PbZrxTi1−xO3 (PZT) (x = 0 to 0.7) were grown on conductive perovskite LaNiO3-buffered platinized Si substrates by metalorganic c...

    C. H. Lin, B. M. Yen, H. C. Kuo, Haydn Chen, T. B. Wu… in Journal of Materials Research (2000)

  3. No Access

    Article

    Activation of silicon ion-implanted gallium nitride by furnace annealing

    Ion implantation into III–V nitride materials is animportant technology for high-power and high-temperature digital and monolithic microwave integrated circuits. We report the results of the electrical, optica...

    R. D. Dupuis, C. J. Eiting, P. A. Grudowski, H. Hsia… in Journal of Electronic Materials (1999)

  4. No Access

    Article

    Thermal Reliability of Pt/Ti/Pt/Au Schottky Contact on InP with a GalnP Schottky Barrier Enhancement Layer

    We present the studies of the thermal stability of various metal including Au, Ti, Pt, Pd and Pt/Ti/Pt/Au Schottky contacts on strained Ga0.2In0.8P/InP semiconductors. Auger electron spectroscopy (AES) analysis a...

    H. C. Kuo, C. H. Lin, B. G. Moser, H. Hsia, Z. Tang… in MRS Online Proceedings Library (1998)

  5. No Access

    Article

    Bandgap Shifting of an Ultra-Thin InGaAs/InP Quantum Well Infrared Photodetector via Rapid Thermal Annealing

    We demonstrate that SiO2 cap rapid thermal annealing in ultra-thin p-type InGaAs/InP quantum wells can be used to produce large blue shifts of the band edge. A substantial bandgap blue shift, as much as 292.5 meV...

    D. K. Sengupta, S. Kim, H. C. Kuo, A. P. Curtis… in MRS Online Proceedings Library (1998)

  6. No Access

    Article

    Characterization of Pb(ScTa)1−xTixO3 (x<0.3) Thin Films Grown on LaNiO3 Coated Si by MOCVD

    Highly (100) textured pseudo-cubic Pb(ScTa)1−xTixO3 (x=0-0.3) (PSTT) thin films were grown by metal-organic chemical vapor deposition (MOCVD) on LaNiO3 (LNO) electrode buffered Si substrates at 650 °C. The micros...

    C. H. Lin, H. C. Kuo, G. E. Stillman, Haydn Chen in MRS Online Proceedings Library (1998)

  7. No Access

    Article

    Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate

    We present in this article device characteristics of molecular beam epitaxy grown GaAs/AlGaAs quantum well infrared photodetectors (QWIP) on a semi-insulating GaAs substrate and on a GaAs-on-Si substrate grown...

    D. K. Sengupta, M. B. Weisman, M. Feng, S. L. Chuang… in Journal of Electronic Materials (1998)

  8. No Access

    Article

    Low-temperature photoluminescence in SiGe single quantum wells

    Gex single quantum wells (x=0.19) grown by rapid thermal chemical vapor deposition at 625 °C. A well-resolved strong excitonic luminescence with TO-phonon and no-phonon transitions with a full width at half-maxim...

    S. Kalem, T. Curtis, W.B. de Boer, G.E. Stillman in Applied Physics A (1998)

  9. No Access

    Article

    Characterization of Highly Textured PZT Thin Films Grown on LaNiO3 Coated Si Substrates by MOCVD

    Highly textured PbZrxTi1-xO3 (PZT) thin films with x= 0-0.6 were grown on LaNiO3 coated Si substrates at 600 °C by metal-organic chemical vapor deposition (MOCVD). The preferred crystalline orientation of PZT thi...

    C. H. Lin, B. M. Yen, Haydn Chen, T. B. Wu, H. C. Kuo… in MRS Online Proceedings Library (1997)

  10. No Access

    Article

    Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 µm

    We present experimental results on the growth and characterization of n-type InGaAs/InP quantum-well intersubband photodetectors for use at 8.93 µm. High-quality InGaAs/InP multiple quantum wells were grown by...

    D. K. Sengupta, S. L Jackson, A. P. Curtis, W. Fang… in Journal of Electronic Materials (1997)

  11. No Access

    Article

    Monolithically Integrated Dual-Band Quantum Well Infrared Photodetector

    A monolithic quantum well infrared photodetector (QWIP) structure has been presented that is suitable for dual bands in the two atmospheric transmission windows of 3 - 5.3 fum and 7.5 - 14fum, respectively. Th...

    D. K. Sengupta, S. D. Gunapala, S. V. Bandara, F. Pool… in MRS Online Proceedings Library (1997)

  12. No Access

    Article

    Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells

    High-quality InGaAs/InP quantum wells with ultra-narrow well widths (∼10Å) and peak response at 4.55 µm were grown by gas source molecular beam epitaxy. These structures were characterized by cross-sectional t...

    D. K. Sengupta, S. L. Jackson, A. P. Curtis, W. Fang… in Journal of Electronic Materials (1997)

  13. No Access

    Article

    Determination of the Band Offset of GalnP- GaAs and AllnP- GaAs Quantum Wells by Optical Spectroscopy

    We report the determination of band offset ratios, using photoluminescence excitation measurements, for GaInP/GaAs and AlInP/GaAs quantum wells grown by gas-source molecular beam epitaxy. To reduce the uncerta...

    H. C. Kuo, J. M. Kuo, Y. C. Wang, C. H. Lin, H. Chen… in Journal of Electronic Materials (1997)

  14. No Access

    Article

    Effects of Rapid Thermal Annealing on the Device Characteristics of Quantum Well Infrared Photodetectors

    The effect of rapid thermal annealing (RTA) on important detector characteristics such as dark current, absolute response, noise, and detectivity is investigated for quantum-well infrared photodetectors (QWIP)...

    D.K. Sengupta, W Fang, J.I. Malin, A.P. Curtis… in Journal of Electronic Materials (1997)

  15. No Access

    Article

    Comparison of n- and p-Type InGaAs/InP Quantum Well Infrared Photodetectors

    Over an order of magnitude reduction in dark current was observed for gas-source molecular beam epitaxially (GSMBE) grown, lattice-matched n- and p-type InGaAs/InP quantum-well infrared photodetectors (QWIPs)....

    D.K. Sengupta, J.I. Malin, S.L. Jackson, W. Fang, W. Wu… in MRS Online Proceedings Library (1996)

  16. No Access

    Article

    Growth and Characterization of InAsxP1−x/InP Strained Multiple Quantum Wells by Gas Source Molecular Beam Expitaxy

    InAsxPi.x/InP (10 period 50/100Å with x=0.25-0.79) pseudomorphically strained multiple quantum wells (SMQWs) were grown by gas source molecular beam expitaxy (GSMBE) at 470°C and characterized by cross-sectional ...

    H. C. Kuo, S. Thomas, A. P. Curtis, G. E. Stillman… in MRS Online Proceedings Library (1996)

  17. No Access

    Article

    Long Wavelength Shifting and Broadening of Quantum Well Infrared Photodetector Response via Rapid Thermal Annealing

    A shift in the peak response wavelength and a broadening of the photoresponse spectrum is demonstrated for intersubband absorption in n-doped GaAs/AlGaAs multiple quantum well detectors following intermixing o...

    D.K. Sengupta, W. Fang, J.I. Malin, H.C. Kuo, T. Horton… in MRS Online Proceedings Library (1996)

  18. No Access

    Article

    Growth and Characterization of Interfaces in P-Type InGaAs/InP Quantum-Well Infrared Photodetectors with Ultra-Thin Quantum Wells

    P-type InGaAs/InP quantum-well infrared photodetectors operated at 4.55 μm require the growth of ultra-thin (10 Å) quantum wells. We report a study of interfaces in QWIPs grown by gas-source molecular beam epi...

    D. K. Sengupta, S. Kim, T. Horton, H. C. Kuo, S. Thomas… in MRS Online Proceedings Library (1996)

  19. No Access

    Article

    High-speed InP/lnGaAs heterojunction bipolar transistor utilizing nonalloyed contacts on n+-InP contacting layers

    We have demonstrated a high-speed InP/lnGaAs heterojunction bipolar transistor with nonalloyed TiPtAu contacts on n+-InP emitter and collector contacting layers. The use of SiBr4 as a silicon do** source enable...

    M. T. Fresina, D. A. Ahmaki, S. Thomas, D. W. Barlage… in Journal of Electronic Materials (1996)

  20. No Access

    Article

    A comparison of TMGa and TEGa for low-temperature metalorganic chemical vapor deposition growth of CCI4-doped inGaAs

    Factors which influence the alloy composition and do** level of CCl4-doped In0.53Ga04.7As grown at low temperatures (450°C < Tg < 560°C) by low-pressure metalorganic chemical vapor deposition (MOCVD) have been ...

    S. A. Stockman, A. W. Hanson, C. M. Colomb… in Journal of Electronic Materials (1994)

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