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Article
Carbon Do** of InGaAs for Device Applications
Carbon has gained wide acceptance as a p-type dopant for GaAs-based device structures due to its low atomic diffusivity. Carbon do** of InGaAs, however, is complicated by the amphoteric nature of C and diffi...
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Article
Passivation of carbon acceptors during growth of carbon-doped GaAs, InGaAs, and HBTs by MOCVD
Carbon dopedp-type GaAs and In0.53Ga0.47As epitaxial layers have been grown by low-pressure metalorganic chemical vapor deposition using CC14 as the carbon source. Low-temperature post-growth annealing resulted i...
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Article
Hall effect analysis of high purity p-type GaAs grown by metalorganic chemical vapor deposition
Variable temperature Hall effect and low temperature photoluminescence measurements have been performed on high purityp- andn-type GaAs grown at atmospheric pressure by metalorganic chemical vapor deposition. The...
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Article
Layer intermixing and related long-term instability in heavily carbon-doped AlGaAs/GaAs superlattices
Superlattices (SLs) of Alo.3Gao.7As/GaAs grown by metalorganic chemical vapor deposition and heavily doped with carbon using CClp4 were annealed for 24 h at 825° C under a variety of ambient and surface encapsula...
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Article
Magnetic properties of donors in GaAsP
The magnetic properties of hydrogenic Te donors and bistable,DX-like S donors in GaAS x P1-x have been investigated. Te shows an EPR signal after cooling...
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Article
An overview of early studies on persistent photoconductivity and other properties of deep levels in GaAsP: The effect of deep levels on light emitting devices
Laser studies carried out at the University of Illinois in 1966 showed that the shortest wavelength at which lasing could be achieved in GaAsP was dependent on then-type dopant. In particular sulfur do** was fo...
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Article
Electronic Stimulation of Acceptor Reactivation IN p - Type Hydrogenated GaAs
The mechanism of light-induced reactivation (LIR) of shallow substitutional acceptors in high-purity p-type hydrogenated GaAs has been investigated. Photoluminescence was used to determine the dependence of th...
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Article
Low - Temperature Defect - Induced Aging of GaAs Grown by Molecular Beam Epitaxy
Degradation in optical and electrical properties has been observed for high-purity and high-mobility p-type GaAs layers which contain significant concentrations of an unidentified shallow acceptor-like defect,...
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Article
Carbon tetrachloride doped Al x Ga1−x As grown by metalorganic chemical vapor deposition
A dilute mixture of CCl4 in H2 has recently been shown to be a suitable carbon do** source for obtainingp-type GaAs grown by metalorganic chemical vapor deposition (MOCVD) with carbon acceptor concentrations in...
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Article
Anomalous Luminescence Properties of GaAs grown by Molecular Beam Epitaxy
A shallow acceptor-like defect labeled “A” is frequently incorporated in molecular beam epitaxial GaAs. We report here anomalous photoluminescence effects that are induced by this defect. With increasing conce...
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Article
Reassessment of Acceptor Passivation Models in p-Type Hydrogenated GaAs
The existing microscopic models of acceptor passivation in p-type hydrogenated GaAs are reviewed in light of new experimental results concerning the relative thermodynamic stability of the passivating complexe...
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Article
Effect of Substrate Misorientation on the Structual Strain and Defect Distribution of Mocvd Grown GaAs on Si
A systematic study of the structural properties and defect distribution of GaAs layers grown by metalorganic chemical vapor deposition on Si substrates misoriented 1°, 1.5°, 2°, 4°, and 6° from [100] toward [0...
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Article
Hydrogenation of GaAs and Application to Device processing
Exposure of GaAs and AlGaAs to a hydrogen plasma has been shown to result in a significant change in the electrical and optical properties. The changes are related to the electrical deactivation of the deep an...
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Article
New shallow acceptor levels in GaAs
Two previously unreported shallow acceptor levels with ionization energies of 25.2 and 43.2 meV, respectively, have been observed in a number of vapor phase epitaxial and metalorganic chemical vapor deposited ...
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Article
Neutron transmutation do** of high purity GaAs
High purity n-type GaAs samples grown by a variety of epitaxial techniques were transmutation doped with a low fluence of thermal neutrons to produce Ge and Se impurities from the host Ga and As atoms, respect...
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Article
Photoluminescence identification of the C and Be acceptor levels in InP
Low dose (5x109-5x1011 cm−2) ion implantations of several ions including C, Be, Mg, and Mn have been performed into high purity epitaxial and bulk InP samples. A comparison of the low temperature (1.7-20 K) photo...
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Chapter
Impact Ionization Coefficients in InP Determined by Analysis of Photocurrent and Noise Measurements
The electron and hole impact ionization coefficients, α and β respectively, have been determined in (100) InP by analysis of photo- multiplication measurements performed on specially fabricated p+n and n+p struct...
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Chapter
High-Field Transport in GaAs, InP, and InxGa1-xAsyP1-y
The static electron velocity-field characteristics for n type GaAs, InP, In0.53Ga0.47As, and In0.8Ga0.44P0.56 have been measured using a microwave time-of-flight technique. Drift velocities were measured at tempe...
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Article
High purity GaAs grown by the hydride vpe process
Epitaxial growth of high purity undoped GaAs by the hydride VPE process with electrical properties comparable to the best AsC3 VPE results have been achieved. Background carrier concentration n77 = 2 × 1013/cc an...
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Article
Residual donors and acceptors in high-purity GaAs and InP grown by hydride VPE
Residual donors and acceptors in epitaxial films of GaAs and InP grown by the hydride vapor phase epitaxy technique were investigated using the complementary techniques of photothermal ionization spectroscopy ...
