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Article
Donor-acceptor interactions in Al0.5In0.5P
Dopant interactions are considered between Mg-acceptor atoms and various donor species, including the deep donor; oxygen; and the shallow donors, Te, S, and Si, in Al0.5In0.5P. While each of these donor species i...
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Article
Oxygen-related deep levels in Al0.5In0.5P grown by MOVPE
Oxygen related defects in Al-containing materials have been determined to degrade luminescence efficiency and reduce carrier lifetime and affect the performance of light emitting diodes and laser diodes utiliz...
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Article
Oxygen incorporation in AllnP, and its effect on P-type do** with magnesium
Oxygen incorporation in AlyIn1−yP (y ∼ 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH3 flow, growth temperature, and alloy composition. Both O2 and diethylalumin...
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Article
Oxygen-Related Defects in In0.5(AlxGa1-x)0.5P Grown by MOVPE
Oxygen related defects in Al-containing semiconductors have been determined to degrade luminescence efficiency and reduce free carrier lifetime, affecting the performance of light emitting diodes and laser dio...
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Article
A comparison of TMGa and TEGa for low-temperature metalorganic chemical vapor deposition growth of CCI4-doped inGaAs
Factors which influence the alloy composition and do** level of CCl4-doped In0.53Ga04.7As grown at low temperatures (450°C < Tg < 560°C) by low-pressure metalorganic chemical vapor deposition (MOCVD) have been ...
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Article
Carbon Do** of InGaAs for Device Applications
Carbon has gained wide acceptance as a p-type dopant for GaAs-based device structures due to its low atomic diffusivity. Carbon do** of InGaAs, however, is complicated by the amphoteric nature of C and diffi...
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Article
Passivation of carbon acceptors during growth of carbon-doped GaAs, InGaAs, and HBTs by MOCVD
Carbon dopedp-type GaAs and In0.53Ga0.47As epitaxial layers have been grown by low-pressure metalorganic chemical vapor deposition using CC14 as the carbon source. Low-temperature post-growth annealing resulted i...
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Article
Low - Temperature Defect - Induced Aging of GaAs Grown by Molecular Beam Epitaxy
Degradation in optical and electrical properties has been observed for high-purity and high-mobility p-type GaAs layers which contain significant concentrations of an unidentified shallow acceptor-like defect,...
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Article
Anomalous Luminescence Properties of GaAs grown by Molecular Beam Epitaxy
A shallow acceptor-like defect labeled “A” is frequently incorporated in molecular beam epitaxial GaAs. We report here anomalous photoluminescence effects that are induced by this defect. With increasing conce...