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  1. No Access

    Article

    Bandgap Shifting of an Ultra-Thin InGaAs/InP Quantum Well Infrared Photodetector via Rapid Thermal Annealing

    We demonstrate that SiO2 cap rapid thermal annealing in ultra-thin p-type InGaAs/InP quantum wells can be used to produce large blue shifts of the band edge. A substantial bandgap blue shift, as much as 292.5 meV...

    D. K. Sengupta, S. Kim, H. C. Kuo, A. P. Curtis… in MRS Online Proceedings Library (1998)

  2. No Access

    Article

    Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate

    We present in this article device characteristics of molecular beam epitaxy grown GaAs/AlGaAs quantum well infrared photodetectors (QWIP) on a semi-insulating GaAs substrate and on a GaAs-on-Si substrate grown...

    D. K. Sengupta, M. B. Weisman, M. Feng, S. L. Chuang… in Journal of Electronic Materials (1998)

  3. No Access

    Article

    Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 µm

    We present experimental results on the growth and characterization of n-type InGaAs/InP quantum-well intersubband photodetectors for use at 8.93 µm. High-quality InGaAs/InP multiple quantum wells were grown by...

    D. K. Sengupta, S. L Jackson, A. P. Curtis, W. Fang… in Journal of Electronic Materials (1997)

  4. No Access

    Article

    Monolithically Integrated Dual-Band Quantum Well Infrared Photodetector

    A monolithic quantum well infrared photodetector (QWIP) structure has been presented that is suitable for dual bands in the two atmospheric transmission windows of 3 - 5.3 fum and 7.5 - 14fum, respectively. Th...

    D. K. Sengupta, S. D. Gunapala, S. V. Bandara, F. Pool… in MRS Online Proceedings Library (1997)

  5. No Access

    Article

    Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells

    High-quality InGaAs/InP quantum wells with ultra-narrow well widths (∼10Å) and peak response at 4.55 µm were grown by gas source molecular beam epitaxy. These structures were characterized by cross-sectional t...

    D. K. Sengupta, S. L. Jackson, A. P. Curtis, W. Fang… in Journal of Electronic Materials (1997)

  6. No Access

    Article

    Effects of Rapid Thermal Annealing on the Device Characteristics of Quantum Well Infrared Photodetectors

    The effect of rapid thermal annealing (RTA) on important detector characteristics such as dark current, absolute response, noise, and detectivity is investigated for quantum-well infrared photodetectors (QWIP)...

    D.K. Sengupta, W Fang, J.I. Malin, A.P. Curtis… in Journal of Electronic Materials (1997)

  7. No Access

    Article

    Growth and Characterization of InAsxP1−x/InP Strained Multiple Quantum Wells by Gas Source Molecular Beam Expitaxy

    InAsxPi.x/InP (10 period 50/100Å with x=0.25-0.79) pseudomorphically strained multiple quantum wells (SMQWs) were grown by gas source molecular beam expitaxy (GSMBE) at 470°C and characterized by cross-sectional ...

    H. C. Kuo, S. Thomas, A. P. Curtis, G. E. Stillman… in MRS Online Proceedings Library (1996)

  8. No Access

    Article

    Growth and Characterization of Interfaces in P-Type InGaAs/InP Quantum-Well Infrared Photodetectors with Ultra-Thin Quantum Wells

    P-type InGaAs/InP quantum-well infrared photodetectors operated at 4.55 μm require the growth of ultra-thin (10 Å) quantum wells. We report a study of interfaces in QWIPs grown by gas-source molecular beam epi...

    D. K. Sengupta, S. Kim, T. Horton, H. C. Kuo, S. Thomas… in MRS Online Proceedings Library (1996)