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  1. No Access

    Article

    Comparison of noninvasive models of fibrosis in chronic hepatitis B

    Liver fibrosis influences treatment and surveillance strategies in chronic hepatitis B (CHB). This multicenter study aimed to examine the accuracy of serum fibrosis models in CHB patients including those with ...

    S. C. Raftopoulos, J. George, M. Bourliere, E. Rossi… in Hepatology International (2012)

  2. No Access

    Article

    Thermal Stability of SiGe/Si Quantum Well Structures Grown By APCVD

    Single and double Si1-xGexx/Si quantum well (QW) structures, which were grown by atmospheric pressure chemical vapor deposition (APCVD), are characterized by photoluminescence and secondary ion mass spectrometry....

    Q. X. Zhao, O. Nur, U. Södervall, C. J. Patel… in MRS Online Proceedings Library (1998)

  3. No Access

    Article

    Loading Effects During Low-Temperature Seg of Si and SiGe

    Selective Epitaxial Growth (SEG) of Si and SiGe suffers from pattern sensitivity. The growth rate and layer composition change with the pattern and the window size. In relation to growth at atmospheric pressur...

    W. B. De Boer, D. Terpstra, R. Dekker in MRS Online Proceedings Library (1998)

  4. No Access

    Article

    Rectal washout eliminates exfoliated malignant cells

    PURPOSE: Irrigation of the rectal stump before anastomosis after resection for carcinoma is accepted colorectal surgical practice. However, not all surgeons perform this routinely, and it has never been establ...

    D. C. Jenner, W. B. de Boer, G. Clarke, M. D. Levitt in Diseases of the Colon & Rectum (1998)

  5. No Access

    Article

    Low-temperature photoluminescence in SiGe single quantum wells

    Gex single quantum wells (x=0.19) grown by rapid thermal chemical vapor deposition at 625 °C. A well-resolved strong excitonic luminescence with TO-phonon and no-phonon transitions with a full width at half-maxim...

    S. Kalem, T. Curtis, W.B. de Boer, G.E. Stillman in Applied Physics A (1998)

  6. No Access

    Article

    The Effect of Oxygen on The Electrical Activation and Diffusion of Ion-Implanted Boron

    Transient enhanced diffusion (TED) and electrical activation (EA) of ion-implanted boron during rapid thermal annealing has been investigated using three types of boron doped p-type Si (100) substrates: (a) Cz...

    K. Kyllesbech Larsen, P. A. Stoik, V. Privitera… in MRS Online Proceedings Library (1997)

  7. No Access

    Chapter

    Rapid Thermal Chemical Vapour Deposition of Epitaxial Si and SiGe

    Epitaxy of Si on Si substrates by CVD is an old technique. Developed to improve the performance of bipolar transistors and integrated circuits, it is finding increasing application in CMOS circuits as well. In...

    W. B. de Boer in Advances in Rapid Thermal and Integrated Processing (1996)

  8. No Access

    Article

    The Necessity of RTCVD in Advanced Epitaxial Growth of Si and SiGe

    Device-quality epi material can be grown at temperatures ranging from 600 to 800°C in commercially available production reactors. The exceptionally steep transitions of Ge, B and, to a lesser extent, P, are ch...

    W. B. De Boer, M. J. J. Theunissen… in MRS Online Proceedings Library (1995)