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    High-speed InP/lnGaAs heterojunction bipolar transistor utilizing nonalloyed contacts on n+-InP contacting layers

    We have demonstrated a high-speed InP/lnGaAs heterojunction bipolar transistor with nonalloyed TiPtAu contacts on n+-InP emitter and collector contacting layers. The use of SiBr4 as a silicon do** source enable...

    M. T. Fresina, D. A. Ahmaki, S. Thomas, D. W. Barlage… in Journal of Electronic Materials (1996)