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    Article

    Raman Scattering Spectroscopy and Photoluminescence of GaAs Nanowires

    Experimental data on studying the phonon and optical properties of GaAs nanowires with orientation (111) located on a gold substrate with the help of Raman scattering spectroscopy (RSS) and photoluminescence (...

    I. V. Kalachev, I. A. Milekhin in Optoelectronics, Instrumentation and Data … (2023)

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    Article

    Van der Waals Heteroepitaxial Growth of Layered SnSe \({}_{\mathbf{2}}\) on Surfaces Si(111) and Bi \({}_{\mathbf{2}}\) Se \({}_{\mathbf{3}}\) (0001)

    Layered SnSe \({}_{2}\) films of nearly 50 and 30 nm in thickness were grown on Si(111) and Bi ...

    S. A. Ponomarev, K. E. Zakhozhev in Optoelectronics, Instrumentation and Data … (2022)

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    Article

    Measuring the Interatomic Distance in a Silicon Crystal Lattice Using an Optical Scanning Interferometer

    We study the influence of the characteristics of the optical system of an interferometer on the distribution of spectral power density of partially coherent light passing through the system. The results of mea...

    E. V. Sysoev, A. V. Latyshev in Optoelectronics, Instrumentation and Data Processing (2021)

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    Article

    Scientific Heritage of S. V. Bogdanov

    This article is dedicated to the famous physicist, founder of the school of acoustoelectronics and acoustooptics, Corresponding Member of the Russian Academy of Sciences Sergei Vasilievich Bogdanov in connecti...

    B. I. Kidyarov, E. A. Kolosovsky in Optoelectronics, Instrumentation and Data … (2021)

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    Article

    Vertical-Cavity Surface-Emitting Lasers for Miniature Quantum Frequency Standards

    The results of the development of vertical-cavity surface emitting lasers based on Al \({}_{x}\) Ga ...

    V. A. Gaisler, I. A. Derebezov in Optoelectronics, Instrumentation and Data … (2021)

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    Article

    Broadband Antireflection Coatings Composed of Subwavelength-Sized SiGe Particles

    Antireflection properties of subwavelength-sized dielectric SiGe particles grown on Si(100) substrates using the dewetting phenomenon are studied. The average particle size has been set by the amount of deposi...

    D. E. Utkin, A. V. Tsarev, E. N. Utkin in Optoelectronics, Instrumentation and Data … (2021)

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    Article

    Low-Frequency Microwave Response of a Quantum Point Contact

    The low-frequency microwave photoconductance of a short (100 nm) quantum point contact based on a high-mobility two-dimensional electron gas in the frequency range of 2–3 GHz is investigated for the first time...

    V. A. Tkachenko, A. S. Yaroshevich, Z. D. Kvon, O. A. Tkachenko in JETP Letters (2021)

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    Article

    Specific Features of the Atomic Structure of Iron Silicide Nanocrystals in a Silicon Matrix

    All transformation stages of the crystal structure of iron silicide nanocrystals (NCs) on an atomically pure Si(111) surface under varying synthesis conditions have been studied in detail using high-resolution...

    A. K. Gutakovskii, A. V. Latyshev in Crystallography Reports (2021)

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    Article

    In Situ Reflection Electron Microscopy for the Analysis of Silicon Surface Processes: Sublimation, Electromigration, and Adsorption of Impurity Atoms

    The results of recent studies of the structural morphological transformations of Si(111) and Si(100) surfaces using in situ ultrahigh-vacuum reflection electron microscopy (UHV REM) are presented. It is establ...

    D. I. Rogilo, S. V. Sitnikov, E. E. Rodyakina, A. S. Petrov in Crystallography Reports (2021)

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    Article

    Photon-Stimulated Transport in a Quantum Point Contact (Brief Review)

    Studies of photon-stimulated transport through a quantum point contact based on a high-mobility two-dimensional electron gas in a GaAs quantum well are reviewed. This review includes a brief historical introdu...

    V. A. Tkachenko, Z. D. Kvon, O. A. Tkachenko, A. S. Yaroshevich in JETP Letters (2021)

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    Article

    Subminiature Light Sources Based on Semiconductor Nanostructures

    The paper states the operating principles of subminiature semiconductor emitters and offers the research results of the performance for those emitters that were developed and manufactured at the Rzhanov Instit...

    V. A. Gaisler, I. A. Derebezov in Optoelectronics, Instrumentation and Data … (2020)

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    Article

    Plasmon-Enhanced Vibrational Spectroscopy of Semiconductors Nanocrystals

    A review of recent results and new data on the study of the optical response from semiconductor nanocrystals obtained using plasmon-enhanced optical spectroscopy, including surface enhanced Raman scattering (S...

    A. G. Milekhin, T. A. Duda, E. E. Rodyakina in Optoelectronics, Instrumentation and Data … (2020)

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    Article

    From Self-Organization of Monoatomic Steps on the Silicon Surface to Subnanometer Metrology

    The article presents how the understanding of the fundamental processes of self-organization and morphological transformations of the atomically clean Si(111) surface as a result of the study using in situ ult...

    D. V. Sheglov, S. V. Sitnikov, L. I. Fedina in Optoelectronics, Instrumentation and Data … (2020)

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    Article

    Etching Kinetics of Si(111) Surface by Selenium Molecular Beam

    Using in situ ultrahigh vacuum reflection electron microscopy, three modes of the etching kinetics of the Si(111) surface with a selenium molecular beam are revealed. In the low temperature region ( ...

    S. A. Ponomarev, D. I. Rogilo, A. S. Petrov in Optoelectronics, Instrumentation and Data … (2020)

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    Article

    Molecular Beam Epitaxy of CdHgTe: Current State and Horizons

    We provide a review of the current state, problems and their solutions, and potential possibilities to develop the technology of the Molecular Beam epitaxy (MBE) to obtain CdHgTe structures on various substrat...

    V. S. Varavin, S. A. Dvoretskii in Optoelectronics, Instrumentation and Data … (2020)

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    Article

    Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods

    Composites consisting of Ge nanoclusters embedded in GeO2 matrix were modified by selective removal of the germanium dioxide in deionized water or HF. Thin (up to 200 nm) and thick (300−1500 nm) GeO2{Ge-NCs} hete...

    K. N. Astankova, E. B. Gorokhov, I. A. Azarov, V. A. Volodin in Semiconductors (2019)

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    Article

    Modulation of Magneto-Intersubband Oscillations in a One-Dimensional Lateral Superlattice

    Low-temperature magnetotransport in a quasi-two-dimensional electron system based on a selectively doped GaAs quantum well with two occupied quantum-confinement subbands with one-dimensional periodic modulatio...

    A. A. Bykov, I. S. Strygin, A. V. Goran, D. V. Nomokonov, I. V. Marchishin in JETP Letters (2019)

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    Article

    Plasmon-Enhanced Near-Field Optical Spectroscopy of Multicomponent Semiconductor Nanostructures

    Multicomponent semiconductor nanostructures were studied by local spectral analysis based on surface-enhanced Raman scattering by semiconductor nanostructures located on the surface of an array of Au nanoclust...

    K. V. Anikin, A. G. Milekhin, M. Rahaman in Optoelectronics, Instrumentation and Data … (2019)

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    Article

    Silicon p-n-Diode Based Electro-Optic Modulators

    A method for forming p-n-diode based silicon electro-optic modulators using local oxidation is tested. It is shown that the local oxidation of silicon allows forming a rib waveguide as a smoothed trapezoid, in co...

    O. V. Naumova, B. I. Fomin, Yu. A. Zhivodkov in Optoelectronics, Instrumentation and Data … (2019)

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    Article

    Photon-Assisted Electron Transmission through a Quantum Point Contact

    The theory of coherent photon-assisted electron transmission through a one-dimensional smooth barrier is successfully used to model the results of measuring the terahertz photoconductivity of a tunneling point...

    O. A. Tkachenko, D. G. Baksheev in Optoelectronics, Instrumentation and Data … (2019)

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